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參數(shù)資料
| 型號(hào)： | BUW13F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Silicon diffused power transistors |
| 中文描述： | 15 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-199, 3 PIN |
| 文件頁(yè)數(shù)： | 4/16頁(yè) |
| 文件大?。?/td> | 105K |
| 代理商： | BUW13F |
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1997 Aug 13
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13F; BUW13AF
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CEOsust
collector-emitter sustaining voltage I
C
= 100 mA; I
Boff
= 0;
BUW13F
BUW13AF
collector-emitter saturation voltage
BUW13F
L = 25 mH; see Figs 6 and 7
400
450
V
V
V
CEsat
I
C
= 10 A; I
B
= 2 A; see
Figs 8 and 10
I
C
= 8 A; I
B
= 1.6 A; see
Figs 8 and 10
1.5
V
BUW13AF
1.5
V
V
BEsat
base-emitter saturation voltage
BUW13F
BUW13AF
I
C
= 10 A; I
B
= 2 A; see Fig.8
I
C
= 8 A; I
B
= 1.6 A;
see Fig.8
V
CE
= 1.5 V
1.6
1.6
V
V
I
Csat
collector saturation current
BUW13F
BUW13AF
collector-emitter cut-off current
10
8
1
A
A
mA
I
CES
V
CE
= V
CESMmax
; V
BE
= 0;
note 1
V
CE
= V
CESMmax
; V
BE
= 0;
T
j
= 125
°
C; note 1
V
EB
= 9 V; I
C
= 0
V
CE
= 5 V; I
C
= 20 mA;
see Fig.11
V
CE
= 5 V; I
C
= 1.5 A;
see Fig.11
4
mA
I
EBO
h
FE
emitter-base cut-off current
DC current gain
10
18
10
35
mA
10
20
35
Switching times resistive load
(see Figs 12 and 13)
t
on
turn-on time
BUW13F
BUW13AF
storage time
BUW13F
BUW13AF
fall time
BUW13F
BUW13AF
I
Con
= 10 A; I
Bon
= I
Boff
= 2 A
I
Con
= 8 A; I
Bon
= I
Boff
= 1.6 A
1
1
μ
s
μ
s
t
s
I
Con
= 10 A; I
Bon
= I
Boff
= 2 A
I
Con
= 8 A; I
Bon
= I
Boff
= 1.6 A
4
4
μ
s
μ
s
t
f
I
Con
= 10 A; I
Bon
= I
Boff
= 2 A
I
Con
= 8 A; I
Bon
= I
Boff
= 1.6 A
0.8
0.8
μ
s
μ
s
Switching times inductive load
(see Figs 14 and 15)
t
s
storage time
BUW13F
I
Con
= 10 A; I
B
= 2 A;
V
CL
= 250 V; T
c
= 100
°
C
I
Con
= 8 A; I
B
= 1.6 A;
V
CL
= 300 V; T
c
= 100
°
C
2.8
3.5
μ
s
BUW13AF
2.8
3.5
μ
s
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