參數(shù)資料
型號(hào): BUW13F
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon diffused power transistors
中文描述: 15 A, 400 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, SOT-199, 3 PIN
文件頁數(shù): 10/16頁
文件大小: 105K
代理商: BUW13F
1997 Aug 13
10
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW13F; BUW13AF
Fig.14 Test circuit inductive load and reverse
bias SOAR.
V
CL
up to 1000 V; V
CC
= 30 V; V
BE
=
5 V; L
B
= 1
μ
H;
L
C
= 200
μ
H.
handbook, halfpage
MGE246
+
IB
VBE
LB
LC
VCC
D.U.T.
VCL
Fig.15 Switching time waveforms with
inductive load.
handbook, halfpage
MGE238
tr
90%
10%
IB
IB on
IB off
IC on
90%
10%
IC
t
t
ts
toff
tf
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