- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373033 > BUT11AF (永盛國際集團(tuán)) SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) PDF資料下載
參數(shù)資料
| 型號(hào)： | BUT11AF |
| 廠商： | 永盛國際集團(tuán) |
| 英文描述： | SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) |
| 中文描述： | 擴(kuò)散硅功率晶體管（一般）的說明 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 116K |
| 代理商： | BUT11AF |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11AF
GENERAL DESCRIPTION
High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated
mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
2.5
800
MAX.
1000
450
5
10
20
1.5
-
-
UNIT
V
V
A
A
W
V
A
ns
T
hs
≤
25 C
[INCLUDE]
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-65
-
MAX.
1000
450
5
10
2
4
20
150
150
UNIT
V
V
A
A
A
A
W
C
C
T
hs
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
55
MAX.
3.95
-
UNIT
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
1500
UNIT
V
-
12
-
pF
August 1997
1
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUT11AI | Silicon Diffused Power Transistor |
| BUT11AX | Silicon Diffused Power Transistor |
| BUT11F | Silicon Diffused Power Transistor |
| BUT12XI | Silicon Diffused Power Transistor |
| BUT12 | Silicon diffused power transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUT11AF/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Full Pak High Voltage NPN Power Transistor |
| BUT11AFI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 5A I(C) | TO-220 |
| BUT11AFTU | 功能描述:兩極晶體管 - BJT NPN Si Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUT11AI | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUT11AI,127 | 功能描述:兩極晶體管 - BJT BUT11AI/SOT78/RAILH// RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。