參數(shù)資料
型號: BUK96150-55A
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS transistor standard level FET
中文描述: 13 A, 55 V, 0.161 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁數(shù): 5/9頁
文件大?。?/td> 71K
代理商: BUK96150-55A
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
BUK95150-55A
BUK96150-55A
Fig.11. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.12. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.13. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.14. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 25 A; parameter V
DS
Fig.15. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.16. Normalised avalanche energy rating.
W
DSS
% = f(T
mb
); conditions: I
D
= 75 A
-100
-50
0
50
100
150
200
0
0.5
1
1.5
2
2.5
Tj / C
VGS(TO) / V
max.
typ.
min.
0
1
2
3
4
5
0
5
15
20
QG10
VGS / V
VDS = 14V
VDS = 44V
0
10
20
30
40
50
60
70
80
90
100
0.0
0.5
1.0
1.5
2.0
VSDS/V
IF/A
25
o
C
Tj/C= 150
o
C
0
0.5
1
1.5
2
2.5
3
1E-05
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
2%
typ
98%
20
40
60
80
100
Tmb / C
120
140
160
180
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
0.0
0.5
1.0
1.5
2.0
2.5
0.01
0.1
1
10
100
VDS/V
Ciss
Coss
Crss
Capacitance / nF
February 2000
5
Rev 1.000
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