參數(shù)資料
型號(hào)： BUK96150-55A
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： TrenchMOS transistor standard level FET
中文描述： 13 A, 55 V, 0.161 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 71K
代理商： BUK96150-55A
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
BUK95150-55A
BUK96150-55A
STATIC CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
55
50
1
0.5
-
-
-
-
-
-
-
-
TYP.
-
-
1.5
-
-
0.05
-
2
125
-
116
124
MAX.
-
-
2.0
-
2.3
10
500
100
150
300
137
161
UNIT
V
V
V
V
V
μ
A
μ
A
nA
m
m
m
m
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
I
DSS
Zero gate voltage drain current
V
DS
= 55 V; V
GS
= 0 V;
T
j
= 175C
I
GSS
R
DS(ON)
Gate source leakage current
Drain-source on-state
resistance
V
GS
=
±
10 V; V
= 0 V
V
GS
= 5 V; I
D
= 13 A
T
j
= 175C
V
GS
= 10 V; I
D
= 13 A
V
GS
= 4.5 V; I
D
= 13 A
DYNAMIC CHARACTERISTICS
T
mb
= 25C unless otherwise specified
SYMBOL
PARAMETER
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
-
-
-
-
-
-
-
-
TYP.
254
54
42
6
285
1
18
4.5
MAX.
339
65
58
6
428
1.4
25
-
UNIT
pF
pF
pF
ns
ns
ns
ns
nH
V
DD
= 30 V; R
=1.2
;
V
GS
= 5 V; R
G
= 10
Measured from drain lead 6 mm
from package to centre of die
Measured from contact screw on
tab to centre of die(TO220AB)
Measured from upper edge of drain
tab to centre of die(SOT404)
Measured from source lead to
source bond pad
L
d
Internal drain inductance
-
3.5
-
nH
L
d
Internal drain inductance
-
2.5
-
nH
L
s
Internal source inductance
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
CONDITIONS
MIN.
-
TYP.
-
MAX.
13
UNIT
A
-
-
-
-
-
-
53
1.2
-
-
-
A
V
V
ns
μ
C
I
F
= 25 A; V
GS
= 0 V
I
F
= 53 A; V
GS
= 0 V
I
F
= 53 A; -dI
/dt = 100 A/
μ
s;
V
GS
= -10 V; V
R
= 30 V
0.85
1.1
24
0.026
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
February 2000
2
Rev 1.000
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