參數(shù)資料
型號(hào)： BUK456-60A
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： PowerMOS transistor
中文描述： 52 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 54K
代理商： BUK456-60A
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK456-60A/B
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
I
DSS
Zero gate voltage drain current
I
DSS
Zero gate voltage drain current
I
GSS
Gate source leakage current
R
DS(ON)
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
60
TYP.
-
MAX.
-
UNIT
V
V
DS
= V
; I
= 1 mA
V
DS
= 60 V; V
GS
= 0 V; T
j
= 25 C
V
DS
= 60 V; V
GS
= 0 V; T
j
=125 C
V
GS
=
±
30 V; V
DS
= 0 V
V
GS
= 10 V;
I
D
2.1
-
-
-
-
-
3.0
1
0.1
10
0.024
0.027
4.0
10
1.0
100
0.028
0.030
V
μ
A
mA
nA
BUK456-60A
BUK456-60B
DYNAMIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
DS
= 25 V; I
D
= 29 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
17
-
-
-
-
-
-
-
-
TYP.
22
1500
800
270
20
70
170
120
3.5
MAX.
-
2000
1000
400
30
100
220
160
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
V
DD
= 30 V; I
D
= 3 A;
V
GS
= 10 V;
R
GS
= 50
;
R
gen
= 50
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
L
d
Internal drain inductance
-
4.5
-
nH
L
s
Internal source inductance
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
-
MIN.
-
TYP.
-
MAX.
52
UNIT
A
-
I
F
= 52 A ; V
GS
= 0 V
I
F
= 52 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 30 V
-
-
-
-
-
208
2.5
-
-
A
V
ns
μ
C
1.8
80
0.4
April 1993
2
Rev 1.100
相關(guān)PDF資料
PDF描述
BUK456-60B Aluminum Electrolytic Capacitor; Voltage Rating:25VDC; Capacitance:1uF; Capacitance Tolerance:+/- 20%; Series:94SL; Termination:Radial Leaded; Working Voltage, DC:25V; Size:.157 x .268 RoHS Compliant: Yes
BUK456-60H PowerMOS transistor
BUK463-100A PowerMOS transistor
BUK463-60B PowerMOS transistor
BUK463-60A PowerMOS transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK456-60B 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor
BUK456-60H 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor
BUK456-800 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor
BUK456-800A 制造商: 功能描述: 制造商:undefined 功能描述:
BUK456-800B 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor
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