參數資料
型號： BUK456-200A
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistor
中文描述： 19 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁數： 2/7頁
文件大?。?/td> 63K
代理商： BUK456-200A
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK456-200A/B
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
I
DSS
Zero gate voltage drain current
I
DSS
Zero gate voltage drain current
I
GSS
Gate source leakage current
R
DS(ON)
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
200
TYP.
-
MAX.
-
UNIT
V
V
DS
= V
; I
= 1 mA
V
DS
= 200 V; V
GS
= 0 V; T
j
= 25 C
V
DS
= 200 V; V
GS
= 0 V; T
j
=125 C
V
GS
=
±
30 V; V
DS
= 0 V
V
GS
= 10 V;
I
D
2.1
-
-
-
-
-
3.0
1
0.1
10
0.15
0.18
4.0
10
1.0
100
0.16
0.20
V
μ
A
mA
nA
BUK456-200A
BUK456-200B
DYNAMIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
DS
= 25 V; I
D
= 10 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
8.5
-
-
-
-
-
-
-
-
TYP.
16
1500
300
60
20
40
145
50
3.5
MAX.
-
2000
400
100
30
60
185
70
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
V
DD
= 30 V; I
D
= 3 A;
V
GS
= 10 V;
R
gen
= 50
;
R
GS
= 50
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
L
d
Internal drain inductance
-
4.5
-
nH
L
s
Internal source inductance
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
-
MIN.
-
TYP.
-
MAX.
19
UNIT
A
-
I
F
= 19 A ; V
GS
= 0 V
I
F
= 19 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 30 V
-
-
-
-
-
76
1.7
-
-
A
V
ns
μ
C
1.0
180
2.5
April 1993
2
Rev 1.100
相關PDF資料
PDF描述
BUK456-60A PowerMOS transistor
BUK456-60B Aluminum Electrolytic Capacitor; Voltage Rating:25VDC; Capacitance:1uF; Capacitance Tolerance:+/- 20%; Series:94SL; Termination:Radial Leaded; Working Voltage, DC:25V; Size:.157 x .268 RoHS Compliant: Yes
BUK456-60H PowerMOS transistor
BUK463-100A PowerMOS transistor
BUK463-60B PowerMOS transistor
相關代理商/技術參數
參數描述
BUK456-200B 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor
BUK456-200B/B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR TO 220 MOSFET N KANAL
BUK456-50A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET
BUK456-50B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET
BUK45660A 制造商:NXP Semiconductors 功能描述:
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