參數(shù)資料
型號: BUK456-200
廠商: NXP Semiconductors N.V.
英文描述: PowerMOS transistor
中文描述: 功率金屬氧化物半導(dǎo)體晶體管
文件頁數(shù): 6/7頁
文件大?。?/td> 63K
代理商: BUK456-200
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK456-200A/B
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.15. TO220AB; pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for TO220 envelopes.
3. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
1 2 3
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
April 1993
6
Rev 1.100
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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