參數(shù)資料
型號： BUK223-50Y
廠商： NXP SEMICONDUCTORS
元件分類： 外設(shè)及接口
英文描述： PowerMOS transistor TOPFET high side switch
中文描述： 55 A BUF OR INV BASED PRPHL DRVR, PZFM5
封裝： PLASTIC, SOT-263B-01, TO-220, 5 PIN
文件頁數(shù)： 4/8頁
文件大?。?/td> 52K
代理商： BUK223-50Y
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET high side switch
BUK223-50Y
INPUT CHARACTERISTICS
9 V
≤
V
BG
≤
16 V. Limits are at -40
C
≤
T
mb
≤
150
C and typicals at T
mb
= 25
C unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
I
Input current
V
IG
= 5 V
20
90
160
μ
A
V
IG
Input clamping voltage
I
I
= 200
μ
A
5.5
7
8.5
V
V
IG(ON)
Input turn-on threshold voltage
-
2.4
3
V
V
IG(OFF)
Input turn-off threshold voltage
1.5
2.1
-
V
V
IG
Input turn-on hysteresis
-
0.3
-
V
I
I(ON)
Input turn-on current
V
IG
= 3 V
-
-
100
μ
A
I
I(OFF)
Input turn-off current
V
IG
= 1.5 V
10
-
-
μ
A
STATUS CHARACTERISTICS
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
Limits are at -40
C
≤
T
mb
≤
150
C and typicals at T
mb
= 25
C unless otherwise stated. Refer to
TRUTH TABLE
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
SG
V
SG
Status clamping voltage
Status low voltage
I
S
= 100
μ
A
I
S
= 100
μ
A
5.5
-
-
7
-
8.5
1
0.8
V
V
V
T
mb
= 25
C
0.7
I
S
Status leakage current
V
SG
= 5 V
-
-
2
-
15
1
12
μ
A
μ
A
mA
T
mb
= 25
C
0.1
7
I
S
Status saturation current
1
V
SG
= 5 V
Application information
External pull-up resistor
R
S
-
47
-
k
OPEN CIRCUIT DETECTION CHARACTERISTICS
An open circuit load can be detected in the on-state. Refer to
TRUTH TABLE
.
Limits are at -40
C
≤
T
mb
≤
150
C and typical is at T
mb
= 25
C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Open circuit detection
9 V
≤
V
BG
≤
35 V
I
L(TO)
Low current detect threshold
0.3
0.5
-
1
2
A
A
T
j
= 25
C
1.5
I
L(TO)
Hysteresis
-
0.2
-
A
1
In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to
prevent possible interference with normal operation of the device.
November 2002
4
Rev 2.000
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK223-50Y,127 功能描述:MOSFET RAIL TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK224-50Y 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TOPFET high side switch
BUK224-50Y /T3 功能描述:電源開關(guān) IC - 配電 TAPE13 TOPFET2 RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
BUK224-50Y,118 功能描述:電源開關(guān) IC - 配電 TAPE13 TOPFET2 RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
BUK2914-50SYTS 功能描述:MOSFET TOPFET HIGH SIDE FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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