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參數(shù)資料
| 型號： | BUK223-50Y |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | PowerMOS transistor TOPFET high side switch |
| 中文描述： | 55 A BUF OR INV BASED PRPHL DRVR, PZFM5 |
| 封裝： | PLASTIC, SOT-263B-01, TO-220, 5 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 52K |
| 代理商： | BUK223-50Y |
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET high side switch
BUK223-50Y
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
BG
Continuous supply voltage
0
50
V
I
L
P
D
T
stg
T
j
Continuous load current
Total power dissipation
Storage temperature
Continuous junction temperature
1
T
mb
≤
100
C
T
mb
≤
25
C
-
-
25
80
175
150
A
W
C
C
-55
-
T
sold
Lead temperature
during soldering
-
260
C
Reverse battery voltages
2
Continuous reverse voltage
Peak reverse voltage
-V
BG
-V
BG
-
-
16
32
V
V
Application information
External resistors
3
R
I
, R
S
to limit input, status currents
3.2
-
k
Input and status
I
I
, I
S
Continuous currents
-5
5
mA
I
I
, I
S
Repetitive peak currents
δ
≤
0.1, tp = 300
μ
s
-50
50
mA
Inductive load clamping
I
L
= 10 A, V
BG
= 16 V
E
BL
Non-repetitive clamping energy
T
j
= 150
C prior to turn-off
-
270
mJ
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
voltage
Human body model;
C = 250 pF; R = 1.5 k
-
2
kV
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
4
R
th j-mb
R
th j-a
Junction to mounting base
-
-
1.25
1.56
K/W
Junction to ambient
in free air
-
60
75
K/W
1
For normal continuous operation. A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates
to protect the switch.
2
Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must
limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the T
j
rating must be observed.
3
To limit currents during reverse battery and transient overvoltages (positive or negative).
4
Of the output power MOS transistor.
November 2002
2
Rev 2.000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK223-50Y,127 | 功能描述:MOSFET RAIL TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK224-50Y | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TOPFET high side switch |
| BUK224-50Y /T3 | 功能描述:電源開關(guān) IC - 配電 TAPE13 TOPFET2 RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| BUK224-50Y,118 | 功能描述:電源開關(guān) IC - 配電 TAPE13 TOPFET2 RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| BUK2914-50SYTS | 功能描述:MOSFET TOPFET HIGH SIDE FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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