參數(shù)資料
型號(hào)： BUK223-50Y
廠商： NXP SEMICONDUCTORS
元件分類： 外設(shè)及接口
英文描述： PowerMOS transistor TOPFET high side switch
中文描述： 55 A BUF OR INV BASED PRPHL DRVR, PZFM5
封裝： PLASTIC, SOT-263B-01, TO-220, 5 PIN
文件頁數(shù)： 3/8頁
文件大小： 52K
代理商： BUK223-50Y
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET high side switch
BUK223-50Y
STATIC CHARACTERISTICS
Limits are at -40
C
≤
T
mb
≤
150
C and typicals at T
mb
= 25
C unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Clamping voltages
Battery to ground
Battery to load
Negative load to ground
Negative load voltage
1
V
BG
V
BL
-V
LG
-V
LG
I
G
= 1 mA
I
L
= I
G
= 1 mA
I
L
= 10 mA
I
L
= 10 A; t
p
= 300
μ
s
50
50
18
20
55
55
23
25
65
65
28
30
V
V
V
V
Supply voltage
Operating range
2
battery to ground
-
V
BG
5.5
-
35
V
Currents
Quiescent current
3
9 V
≤
V
BG
≤
16 V
V
LG
= 0 V
I
B
-
-
-
-
-
-
20
2
20
1
4
-
μ
A
μ
A
μ
A
μ
A
mA
A
T
mb
= 25
C
0.1
-
0.1
2
-
I
L
Off-state load current
4
V
BL
= V
BG
T
mb
= 25
C
I
G
I
L
Operating current
5
Nominal load current
6
I
L
= 0 A
V
BL
= 0.5 V
12
Resistances
V
BG
I
L
t
p
T
mb
R
ON
On-state resistance
7
9 to 35 V
10 A
300
μ
s
25
C
150
C
25
C
150
C
-
-
-
-
22
-
28
-
30
55
38
70
m
m
m
m
R
ON
On-state resistance
6 V
10 A
300
μ
s
R
G
Internal ground resistance
I
G
= 10 mA
95
150
190
1
For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
2
On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.
3
This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
4
The measured current is in the load pin only.
5
This is the continuous current drawn from the supply with no load connected, but with the input high.
6
Defined as in ISO 10483-1. For comparison purposes only. This parameter will not be characterised for automotive PPAP.
7
The supply and input voltage for the R
ON
tests are continuous. The specified pulse duration t
p
refers only to the applied load current.
November 2002
3
Rev 2.000
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK223-50Y,127 功能描述:MOSFET RAIL TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK224-50Y 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TOPFET high side switch
BUK224-50Y /T3 功能描述:電源開關(guān) IC - 配電 TAPE13 TOPFET2 RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
BUK224-50Y,118 功能描述:電源開關(guān) IC - 配電 TAPE13 TOPFET2 RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
BUK2914-50SYTS 功能描述:MOSFET TOPFET HIGH SIDE FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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