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參數(shù)資料
| 型號(hào)： | BUK127-50DL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | PowerMOS transistor Logic level TOPFET(功率MOS場(chǎng)效應(yīng)管邏輯電平TOPFET) |
| 中文描述： | 1.8 A BUF OR INV BASED PRPHL DRVR, PDSO4 |
| 封裝： | PLASTIC, SOT-223, 3 PIN |
| 文件頁數(shù)： | 6/11頁 |
| 文件大小： | 96K |
| 代理商： | BUK127-50DL |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK127-50DL
Fig.8. Typical overtemperature protection threshold.
T
j(TO)
= f(V
IS
)
Fig.9. Typical DC input characteristics, T
= 25C.
I
IS
& I
ISL
= f(V
IS
); normal operation & protection latched
Fig.10. Typical DC input currents.
I
IS
& I
ISL
= f(T
j
); parameter V
IS
; normal & latched
Fig.11. Input threshold voltage.
V
IS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= 5 V
Fig.12. Typical input clamping characteristic.
I
I
= f(V
IS
); normal operation, T
j
= 25C.
Fig.13. Typical overload protection response time.
1 / t
dsc
= f(P
D
); V
IS
≥
4 V, T
j
≤
125C.
2
3
4
5
6
7
8
160
165
170
175
180
185
190
195
200
BUK127-50DL
Tj(TO) / C
VIS / V
DATA BELOW 4V IS FOR
INFORMATION ONLY.
ALL SPEC. VALUES ARE
FOR NORMAL OPERATION
AT 4V AND ABOVE.
-50
0
50
100
150
0
1
2
3
4
BUK127-50DL
VIS(TO) / V
Tj / C
TYP.
MIN.
MAX.
0
1
2
3
4
5
6
7
8
0
0.5
1
Vis / V
Ii / mA
Iisl
Iis
0
2
4
6
8
10
0
1
2
3
4
5
6
7
8
9
10
BUK127-50DL
II / mA
VIS / V
-50
0
50
Tj / C
100
150
0
100
200
300
400
500
BUK127-50DL
IIS & IISL / uA
= IIS
= IISL
5V
5V
4V
3V
VIS / V =
0
10
20
30
50
0
200
400
600
800
1000
1200
1400
1600
1s / tdsc
Pd / W
BUK127-50DL
5
15
25
35
40
45
October 1999
6
Rev 1.000
相關(guān)PDF資料 |
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| BUK127-50DL | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 700MA I(D) | SOT-223 |
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| BUK148-50DL | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 8A I(D) | TO-220VAR |
| BUK200-50X_1 | PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān)) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK127-50DL T/R | 功能描述:MOSFET TAPE-7 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK127-50DL,115 | 功能描述:MOSFET TAPE-7 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK127-50GT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK127-50GT T/R | 功能描述:MOSFET TAPE-7 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK127-50GT,115 | 功能描述:MOSFET TAPE-7 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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