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參數(shù)資料
| 型號： | BUK127-50DL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設及接口 |
| 英文描述： | PowerMOS transistor Logic level TOPFET(功率MOS場效應管邏輯電平TOPFET) |
| 中文描述： | 1.8 A BUF OR INV BASED PRPHL DRVR, PDSO4 |
| 封裝： | PLASTIC, SOT-223, 3 PIN |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 96K |
| 代理商： | BUK127-50DL |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK127-50DL
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off to protect itself when one of the overload thresholds is exceeded.
It remains latched off until reset by the input.
SYMBOL
PARAMETER
Overload protection
I
D
Drain current limiting
CONDITIONS
-40C
≤
T
j
≤
150C
V
IS
= 5 V
V
IS
= 4.5 V
V
IS
= 4 V to 5.5 V
MIN.
TYP.
MAX.
UNIT
0.8
0.7
0.6
1.3
-
-
1.7
-
1.8
A
A
A
Short circuit load protection
V
IS
= 5 V
P
D(TO)
Overload power threshold
for protection to operate
-
17
-
W
T
DSC
Characteristic time
which determines trip time
1
-
1.6
-
ms
Overtemperature protection
Threshold junction temperature V
IS
= 4 V to 5.5 V
from I
D
≥
280 mA or V
DS
≥
100 mV
T
j(TO)
150
165
-
C
SWITCHING CHARACTERISTICS
T
a
= 25C; resistive load R
L
= 50
; adjust V
DD
to obtain I
D
= 250 mA; refer to test circuit and waveforms
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
t
d on
t
r
t
d off
t
f
Turn-on delay time
V
IS
: 0 V
5 V
-
5
12
μ
s
μ
s
μ
s
μ
s
Rise time
-
11
30
Turn-off delay time
V
IS
: 5 V
0 V
-
25
65
Fall time
-
14
35
REVERSE DIODE LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
S
Continuous forward current
T
mb
≤
25 C; V
IS
= 0 V
-
2
A
REVERSE DIODE CHARACTERISTICS
Limits are for -40C
≤
T
mb
≤
150C; typicals are for T
mb
= 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
SDO
t
rr
Forward voltage
I
S
= 2 A; V
IS
= 0 V; t
p
= 300
μ
s
not applicable
2
-
0.83
1.1
V
Reverse recovery time
-
-
-
-
1
Trip time t
d sc
varies with overload dissipation P
D
according to the formula t
d sc
≈
T
DSC
/ [ P
D
/ P
D(TO)
- 1 ].
2
The reverse diode of this type is not intended for applications requiring fast reverse recovery.
October 1999
4
Rev 1.000
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BUK127-50DL T/R | 功能描述:MOSFET TAPE-7 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK127-50DL,115 | 功能描述:MOSFET TAPE-7 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK127-50GT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK127-50GT T/R | 功能描述:MOSFET TAPE-7 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK127-50GT,115 | 功能描述:MOSFET TAPE-7 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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