參數(shù)資料
型號： BUK127-50DL
廠商： NXP SEMICONDUCTORS
元件分類： 外設(shè)及接口
英文描述： PowerMOS transistor Logic level TOPFET(功率MOS場效應(yīng)管邏輯電平TOPFET)
中文描述： 1.8 A BUF OR INV BASED PRPHL DRVR, PDSO4
封裝： PLASTIC, SOT-223, 3 PIN
文件頁數(shù)： 3/11頁
文件大小： 96K
代理商： BUK127-50DL
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK127-50DL
OUTPUT CHARACTERISTICS
Limits are for -40C
≤
T
mb
≤
150C; typicals are for T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Off-state
V
IS
= 0 V
I
D
= 10 mA
I
D
= 200 mA; t
p
≤
300
μ
s;
δ
≤
0.01
V
DS
= 40 V
V
(CL)DSS
Drain-source clamping voltage
50
-
-
V
50
60
70
V
I
DSS
Drain source leakage current
-
-
-
100
10
μ
A
μ
A
T
mb
= 25 C
0.1
On-state
V
IS
≥
4 V; t
p
≤
300
μ
s;
δ
≤
0.01
I
D
= 100 mA
R
DS(ON)
Drain-source resistance
-
-
-
380
200
m
m
T
mb
= 25 C
150
INPUT CHARACTERISTICS
The supply for the logic and overload protection is taken from the input.
Limits are for -40C
≤
T
mb
≤
150C; typicals are for T
mb
= 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
IS(TO)
Input threshold voltage
V
DS
= 5 V; I
D
= 1 mA
0.6
1.1
-
2.4
2.1
V
V
T
mb
= 25C
V
IS
= 5 V
V
IS
= 4 V
V
IS
= 5 V
V
IS
= 3 V
1.6
I
IS
Input supply current
normal operation;
100
80
220
195
400
330
μ
A
μ
A
μ
A
μ
A
I
ISL
Input supply current
protection latched;
200
130
400
250
650
430
V
ISR
t
lr
V
(CL)IS
R
IG
Protection reset voltage
1
reset time t
r
≥
100
μ
s
V
IS1
= 5 V, V
IS2
< 1 V
I
I
= 1.5 mA
1.5
2
2.5
V
Latch reset time
10
40
100
μ
s
Input clamping voltage
5.5
-
8.5
V
Input series resistance
2
to gate of power MOSFET
T
mb
= 25C
-
33
-
k
1
The input voltage below which the overload protection circuits will be reset.
2
Not directly measureable from device terminals.
October 1999
3
Rev 1.000
相關(guān)PDF資料
PDF描述
BUK127-50DL TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 700MA I(D) | SOT-223
BUK130-50DL Logic level TOPFET SMD version of BUK119-50DL
BUK148-50DL TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 8A I(D) | TO-220VAR
BUK200-50X_1 PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān))
BUK200-50X PowerMOS transistor TOPFET high side switch
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK127-50DL T/R 功能描述:MOSFET TAPE-7 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK127-50DL,115 功能描述:MOSFET TAPE-7 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK127-50GT 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET
BUK127-50GT T/R 功能描述:MOSFET TAPE-7 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK127-50GT,115 功能描述:MOSFET TAPE-7 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*