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參數(shù)資料
| 型號(hào)： | BUK127-50DL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | PowerMOS transistor Logic level TOPFET(功率MOS場(chǎng)效應(yīng)管邏輯電平TOPFET) |
| 中文描述： | 1.8 A BUF OR INV BASED PRPHL DRVR, PDSO4 |
| 封裝： | PLASTIC, SOT-223, 3 PIN |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大?。?/td> | 96K |
| 代理商： | BUK127-50DL |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK127-50DL
Fig.2. Normalised limiting power dissipation.
P
D
% = 100
P
D
/P
D
(25C) = f(T
mb
)
Fig.3. Continuous drain current.
I
D
= f(T
amb
); condition: V
IS
= 5 V
Fig.4. Typical on-state characteristics, T
j
= 25C.
I
D
= f(V
DS
); parameter V
IS
; t
p
= 300
μ
s
Fig.5. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)
25C = f(T
j
); I
D
= 100 mA; V
IS
= 4.4 V
Fig.6. Typical on-state resistance, T
j
= 25C.
R
DS(ON)
= f(V
IS
); conditions: I
D
= 100 mA, t
p
= 300
μ
s
Fig.7. Typical transfer characteristics, T
= 25C.
I
D
= f(V
IS
); conditions: V
DS
= 10 V, t
p
= 300
μ
s
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
0.5
1
1.5
2
-50
0
100
150
Normalised RDS(ON) = f(Tj)
a
T50
0
0
0.5
1.0
1.5
2.0
20
40
60
80
100
120
140
BUK127-50DL
ID / A
Tamb / C
CURRENT LIMITING OCCURS
WITHIN SHADED REGION
TYP.
0
1
2
3
4
5
6
7
8
0
50
100
150
200
250
300
350RDS(ON) / mOhm
BUK127-50DL
VIS / V
TYP.
MAX.
0
20
0
0.5
1
1.5
2
ID / A
VDS / V
BUK127-50DL
4
8
12
16
28
32
24
VIS / V =
6
5
7
4
0
1
2
3
4
5
6
7
0
0.5
1
1.5
2
VIS / V
ID / A
BUK127-50DL
October 1999
5
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK127-50DL | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 700MA I(D) | SOT-223 |
| BUK130-50DL | Logic level TOPFET SMD version of BUK119-50DL |
| BUK148-50DL | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 8A I(D) | TO-220VAR |
| BUK200-50X_1 | PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān)) |
| BUK200-50X | PowerMOS transistor TOPFET high side switch |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK127-50DL T/R | 功能描述:MOSFET TAPE-7 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK127-50DL,115 | 功能描述:MOSFET TAPE-7 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK127-50GT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK127-50GT T/R | 功能描述:MOSFET TAPE-7 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK127-50GT,115 | 功能描述:MOSFET TAPE-7 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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