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參數(shù)資料
| 型號： | BUK109-50GS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor TOPFET(功率MOS晶體管TOPFET) |
| 中文描述： | 29 A, 50 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK, 3 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 115K |
| 代理商： | BUK109-50GS |
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET
BUK109-50GS
Fig.18. Typical DC input characteristics, T
j
= 25 C.
I
ISL
= f(V
IS
); overload protection operated
I
D
= 0 A
Fig.19. Typical reverse diode current, T
= 25 C.
I
S
= f(V
SDS
); conditions: V
IS
= 0 V; t
p
= 250
μ
s
Fig.20. Test circuit for resistive load switching times.
Fig.21. Typical switching waveforms, resistive load.
V
DD
= 13 V; R
L
= 2.1
; R
I
= 50
, T
j
= 25 C.
Fig.22. Typical switching waveforms, resistive load.
V
DD
= 13 V; R
L
= 2.1
; R
I
= 50
, T
j
= 25 C.
Fig.23. Test circuit for inductive load switching times.
0
2
4
6
8
10
12
14
VIS / V
IIS / mA
BUK109-50GS
5
4
3
2
1
0
PROTECTION LATCHED
NORMAL
RESET
0
10
20
RESISTIVE TURN-ON
time / us
BUK109-50GS
10
5
0
VDS / V
VIS / V
ID / A
10%
10%
td on
90%
tr
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD / V
IS / A
BUK109-50GS
120
100
80
60
40
20
0
0
20
40
RESISTIVE TURN-OFF
time / us
BUK109-50GS
10
5
0
50
30
10
VDS / V
VIS / V
ID / A
90%
90%
10%
td off
tf
VDD
D.U.T.
R
0V
0R1
I
VIS
ID measure
D
S
I
TOPFET
P
RL
: adjust for correct ID
VDD = VCL
LD
D.U.T.
R
0V
tp
0R1
I
VIS
ID measure
D
S
I
TOPFET
P
June 1996
8
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK111-50GL | Logic level TOPFET SMD version of BUK112-50GL |
| BUK112-50GL | N-Channel Enhancement MOSFET |
| BUK113-50DL | N-Channel Enhancement MOSFET |
| BUK114-50L | Logic level TOPFET SMD version of BUK104-50L/S |
| BUK114-50S | Logic level TOPFET SMD version of BUK104-50L/S |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK110-50DL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK110-50GL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK110-50GL /T3 | 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK110-50GL,118 | 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK110-50GS | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET |
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