參數(shù)資料
型號(hào)： BUK109-50GS
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistor TOPFET(功率MOS晶體管TOPFET)
中文描述： 29 A, 50 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK, 3 PIN
文件頁數(shù)： 4/12頁
文件大?。?/td> 115K
代理商： BUK109-50GS
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET
BUK109-50GS
INPUT CHARACTERISTICS
T
mb
= 25 C unless otherwise specified. The supply for the logic and overload protection is taken from the input.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
IS(TO)
I
IS
V
ISR
V
ISR
I
ISL
V
(BR)IS
R
IG
Input threshold voltage
Input supply current
Protection reset voltage
1
V
DS
= 5 V; I
D
= 1 mA
V
IS
= 10 V; normal operation
1.0
-
2.0
1.5
0.4
2.6
2.0
1.0
3.5
V
mA
V
Protection reset voltage
T
j
= 150 C
V
IS
= 10 V; protection latched
I
I
= 10 mA
to gate of power MOSFET
1.0
-
-
Input supply current
Input clamp voltage
Input series resistance
1.0
11
-
2.5
13
4
4.0
-
-
mA
V
k
TRANSFER CHARACTERISTICS
T
mb
= 25 C
SYMBOL
PARAMETER
g
fs
Forward transconductance
CONDITIONS
V
DS
= 10 V; I
DM
= 13 A t
p
≤
300
μ
s;
δ
0.01
V
DS
= 13 V; V
IS
= 10 V
MIN.
10
TYP.
16
MAX.
-
UNIT
S
I
D(SC)
Drain current
2
-
80
-
A
SWITCHING CHARACTERISTICS
T
mb
= 25 C. R
I
= 50
. Refer to waveform figures and test circuits.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
t
d on
t
r
t
d off
t
f
t
d on
t
r
t
d off
t
f
Turn-on delay time
V
DD
= 13 V; V
IS
= 10 V
resistive load R
L
= 2.1
V
DD
= 13 V; V
IS
= 0 V
resistive load R
L
= 2.1
V
DD
= 10 V; V
IS
= 10 V
inductive load I
DM
= 6 A
V
DD
= 10 V; V
IS
= 0 V
inductive load I
DM
= 6 A
-
1.5
-
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
Rise time
-
6
-
Turn-off delay time
-
18
-
Fall time
-
9
-
Turn-on delay time
-
2
-
Rise time
-
1
-
Turn-off delay time
-
22
-
Fall time
-
1
-
REVERSE DIODE LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
S
Continuous forward current
T
mb
≤
25 C; V
IS
= 0 V
-
29
A
1
The input voltage below which the overload protection circuits will be reset.
2
During overload before short circuit load protection operates.
June 1996
4
Rev 1.000
相關(guān)PDF資料
PDF描述
BUK111-50GL Logic level TOPFET SMD version of BUK112-50GL
BUK112-50GL N-Channel Enhancement MOSFET
BUK113-50DL N-Channel Enhancement MOSFET
BUK114-50L Logic level TOPFET SMD version of BUK104-50L/S
BUK114-50S Logic level TOPFET SMD version of BUK104-50L/S
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK110-50DL 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET
BUK110-50GL 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET
BUK110-50GL /T3 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK110-50GL,118 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK110-50GS 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET
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