參數(shù)資料
型號(hào): BUK109-50GS
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor TOPFET(功率MOS晶體管TOPFET)
中文描述: 29 A, 50 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK, 3 PIN
文件頁數(shù): 11/12頁
文件大?。?/td> 115K
代理商: BUK109-50GS
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET
BUK109-50GS
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
Fig.32. SOT404 : centre pin connected to mounting base.
Notes
1. Epoxy meets UL94 V0 at 1/8".
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.33. SOT404 : minimum pad sizes for surface mounting
Notes
1. Plastic meets UL94 V0 at 1/8".
11 max
4.5 max
1.4 max
10.3 max
0.5
15.4
2.5
0.85 max
(x2)
2.54 (x2)
17.5
11.5
9.0
5.08
3.8
2.0
June 1996
11
Rev 1.000
相關(guān)PDF資料
PDF描述
BUK111-50GL Logic level TOPFET SMD version of BUK112-50GL
BUK112-50GL N-Channel Enhancement MOSFET
BUK113-50DL N-Channel Enhancement MOSFET
BUK114-50L Logic level TOPFET SMD version of BUK104-50L/S
BUK114-50S Logic level TOPFET SMD version of BUK104-50L/S
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK110-50DL 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET
BUK110-50GL 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET
BUK110-50GL /T3 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK110-50GL,118 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK110-50GS 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET