參數(shù)資料
型號(hào)： BUK108-50DL
廠商： NXP SEMICONDUCTORS
元件分類： 外設(shè)及接口
英文描述： PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET)
中文描述： BUF OR INV BASED PRPHL DRVR, SSO3
封裝： SSO-3
文件頁(yè)數(shù)： 3/10頁(yè)
文件大?。?/td> 89K
代理商： BUK108-50DL
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK108-50DL
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
R
th j-mb
R
th j-a
Junction to mounting base
-
-
2.5
3.1
K/W
Junction to ambient
minimum footprint FR4 PCB
(see fig. 23)
-
50
-
K/W
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(CL)DSS
V
(CL)DSS
Drain-source clamping voltage
V
IS
= 0 V; I
D
= 10 mA
V
IS
= 0 V; I
DM
= 1 A; t
p
≤
300
μ
s;
δ
≤
0.01
50
-
-
V
Drain-source clamping voltage
-
-
70
V
I
DSS
I
DSS
I
DSS
R
DS(ON)
Zero input voltage drain current V
DS
= 12 V; V
IS
= 0 V
Zero input voltage drain current V
DS
= 50 V; V
IS
= 0 V
Zero input voltage drain current V
DS
= 40 V; V
IS
= 0 V; T
j
= 125 C
Drain-source on-state
resistance
1
-
-
-
-
0.5
1
10
85
10
20
100
125
μ
A
μ
A
μ
A
m
V
IS
= 5 V; I
DM
= 7.5 A; t
p
≤
300
μ
s;
δ
≤
0.01
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input.
SYMBOL
PARAMETER
CONDITIONS
Short circuit load protection
2
T
mb
= 25 C; L
≤
10
μ
H; R
L
= 10 m
E
DS(TO)
Overload threshold energy
V
DD
= 13 V; V
IS
= 5 V
t
d sc
Response time
V
DD
= 13 V; V
IS
= 5 V
I
D(SC)
Drain current
3
V
DD
= 13 V; V
IS
= 5 V
I
DM(SC)
Peak drain current
4
V
IS
= 5 V; V
DD
= 13 V
Over temperature protection
T
j(TO)
Threshold junction temperature V
IS
= 5 V; from I
D
≥
0.5 A
5
MIN.
TYP.
MAX.
UNIT
-
-
-
-
0.2
0.8
25
60
-
-
-
-
J
ms
A
A
150
-
-
C
TRANSFER CHARACTERISTIC
T
mb
= 25 C
SYMBOL
PARAMETER
g
fs
Forward transconductance
CONDITIONS
V
DS
= 10 V; I
DM
= 7.5 A t
p
≤
300
μ
s;
δ
0.01
MIN.
5
TYP.
9
MAX.
-
UNIT
S
1
Continuous input voltage. The specified pulse width is for the drain current.
2
Refer to OVERLOAD PROTECTION LIMITING VALUES.
3
Continuous drain-source supply voltage. Pulsed input voltage.
4
Continuous input voltage. Momentary short circuit load connection. (The higher peak current is due to the effect of capacitance Cgd).
5
The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I
D
ensures this condition.
June 1996
3
Rev 1.000
相關(guān)PDF資料
PDF描述
BUK108-50GL PowerMOS transistor Logic level TOPFET(功率MOS場(chǎng)效應(yīng)管邏輯電平TOPFET)
BUK108-50GS PowerMOS transistor TOPFET(功率MOS晶體管TOPFET)
BUK109-50DL PowerMOS transistor Logic level TOPFET(功率MOS場(chǎng)效應(yīng)管邏輯電平TOPFET)
BUK109-50GL PowerMOS transistor Logic level TOPFET(功率MOS場(chǎng)效應(yīng)管邏輯電平TOPFET)
BUK109-50GS PowerMOS transistor TOPFET(功率MOS晶體管TOPFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK108-50DL /T3 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK108-50DL,118 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK108-50GL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET
BUK108-50GS 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET
BUK109-50DL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*