參數(shù)資料
型號(hào)： BUK106-50SP
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 外設(shè)及接口
英文描述： PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET)
中文描述： 160 A BUF OR INV BASED PRPHL DRVR, PZFM5
封裝： PLASTIC, SOT-263-01, 5 PIN
文件頁(yè)數(shù)： 4/14頁(yè)
文件大?。?/td> 142K
代理商： BUK106-50SP
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK106-50L/S
BUK106-50LP/SP
OVERLOAD PROTECTION CHARACTERISTICS
With adequate protection supply
voltage TOPFET detects when one
of the overload thresholds is
exceeded.
SYMBOL
PARAMETER
Short circuit load protection
1
E
DS(TO)
Overload threshold energy
t
d sc
Response time
Over temperature protection
T
j(TO)
Threshold junction temperature from I
D
2.5 A
3
Provided there is adequate input
series resistance it switches off
and remains latched off until reset
by the protection supply pin.
CONDITIONS
V
PS
= V
V
DD
= 13 V; V
IS
= 10 V
V
DD
= 13 V; V
IS
= 10 V
V
= V
PSN
Refer also to OVERLOAD
PROTECTION LIMITING VALUES
and INPUT CHARACTERISTICS.
MIN.
TYP.
MAX.
UNIT
2
; T
mb
= 25 C; L
≤
10
μ
H
-
-
550
0.4
-
-
mJ
ms
150
-
-
C
TRANSFER CHARACTERISTICS
T
mb
= 25 C
SYMBOL
PARAMETER
g
fs
Forward transconductance
CONDITIONS
V
DS
= 12 V; I
DM
= 25 A t
p
≤
300
μ
s;
δ
0.01
V
DS
= 13 V;
MIN.
17
TYP.
28
MAX.
-
UNIT
S
I
D
Drain current
4
V
= 5 V
V
IS
= 10 V
-
80
160
-
-
A
A
PROTECTION SUPPLY CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Protection supply
I
PS
,
Protection supply current
I
PSL
CONDITIONS
MIN.
TYP.
MAX.
UNIT
normal operation or
protection latched
BUK106-50L
BUK106-50S
V
PS
= 5 V
V
PS
= 10 V
-
-
0.2
0.4
2.5
-
13
0.35
1.0
3.5
-
-
mA
mA
V
V
V
V
PSR
Protection reset voltage
5
1.5
1.0
11
T
j
= 150 C
I
P
= 1.35 mA
V
(CL)PS
Protection clamp voltage
REVERSE DIODE CHARACTERISTICS
T
mb
= 25 C
SYMBOL
PARAMETER
V
SDS
Forward voltage
CONDITIONS
I
S
= 20 A; V
IS
= V
PS
= V
FS
= 0 V;
t
p
= 300
μ
s
not applicable
6
MIN.
-
TYP.
0.9
MAX.
1.2
UNIT
V
t
rr
Reverse recovery time
-
-
-
-
1
The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for
P
DSM
, which is always the case when V
DS
is less than V
DSP
maximum.
2
At the appropriate nominal protection supply voltage for each type. Refer to QUICK REFERENCE DATA.
3
The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I
D
ensures this condition.
4
During overload condition. Refer also to OVERLOAD PROTECTION LIMITING VALUES and CHARACTERISTICS.
5
The supply voltage below which the overload protection circuits will be reset.
6
The reverse diode of this type is not intended for applications requiring fast reverse recovery.
February 1993
4
Rev 1.200
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