參數(shù)資料
型號(hào)： BUK106-50SP
廠商： NXP SEMICONDUCTORS
元件分類： 外設(shè)及接口
英文描述： PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET)
中文描述： 160 A BUF OR INV BASED PRPHL DRVR, PZFM5
封裝： PLASTIC, SOT-263-01, 5 PIN
文件頁(yè)數(shù)： 1/14頁(yè)
文件大?。?/td> 142K
代理商： BUK106-50SP
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK106-50L/S
BUK106-50LP/SP
DESCRIPTION
QUICK REFERENCE DATA
Monolithic temperature and
overload protected logic level power
MOSFET in a 5 pin plastic
envelope, intended as a general
purpose switch for automotive
systems and other applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
T
j
R
DS(ON)
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
50
50
125
150
V
A
W
C
APPLICATIONS
V
IS
= 5 V
V
IS
= 8 V
35
28
m
m
General controller for driving
lamps
motors
solenoids
heaters
SYMBOL
PARAMETER
NOM.
UNIT
V
PSN
Protection supply voltage
BUK106-50L
BUK106-50S
5
10
V
V
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Vertical power DMOS output
stage
Low on-state resistance
Logic and protection supply
from separate pin
Low operating supply current
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by protection supply
Protection circuit condition
indicated by flag pin
5 V logic compatible input level
Separate input pin
for higher frequency drive
ESD protection on input, flag
and protection supply pins
Over voltage clamping for turn
off of inductive loads
Both linear and switching
operation are possible
Fig.1. Elements of the TOPFET.
PINNING - SOT263
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
input
2
flag
3
drain
4
protection supply
5
source
Fig. 2. Type numbers ending with
suffix P refer to leadform 263-01.
Fig. 3.
tab
drain
POWER
MOSFET
DRAIN
SOURCE
INPUT
O/V
CLAMP
LOGIC AND
PROTECTION
PROTECTION SUPPLY
FLAG
leadform
263-01
tab
1 2 3 4 5
D
S
I
TOPFET
P
F
P
February 1993
1
Rev 1.200
相關(guān)PDF資料
PDF描述
BUK107-50DL PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET)
BUK107-50DS PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPEFT)
BUK108-50DL PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET)
BUK108-50GL PowerMOS transistor Logic level TOPFET(功率MOS場(chǎng)效應(yīng)管邏輯電平TOPFET)
BUK108-50GS PowerMOS transistor TOPFET(功率MOS晶體管TOPFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK107-50DL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET
BUK107-50DL T/R 功能描述:MOSFET TAPE-7 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK107-50DL,115 功能描述:MOSFET TAPE-7 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK107-50DLT/R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 500MA I(D) | SOT-223
BUK107-50DS 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET
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