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參數(shù)資料
| 型號： | BUK100-50GS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設及接口 |
| 英文描述： | PowerMOS transistor TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| 中文描述： | 40 A BUF OR INV BASED PRPHL DRVR, PSFM3 |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 9/11頁 |
| 文件大?。?/td> | 112K |
| 代理商： | BUK100-50GS |
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET
BUK100-50GS
Fig.26. Normalised limiting clamping energy.
E
DSM
% = f(T
mb
); conditions: I
D
= 15 A; V
IS
= 10 V
Fig.27. Clamping energy test circuit, R
IS
= 50
.
E
DSM
=
0.5
LI
D
Fig.28. Typical off-state leakage current.
I
DSS
= f(T
j
); Conditions: V
DS
= 40 V; I
IS
= 0 V.
Fig.29. Normalised input current (normal operation).
I
IS
/I
IS
25 C = f(T
j
); V
IS
= 10 V
Fig.30. Normalised input current (protection latched).
I
ISL
/I
ISL
25 C = f(T
j
); V
IS
= 10 V
Fig.31. Maximum drain source supply voltage for
SC load protection. V
DDP(P)
= f(V
IS
); T
mb
≤
150 C
0
20
40
60
80
100
120
140
Tmb / C
EDSM%
120
110
100
90
80
70
60
50
40
30
20
10
0
-60
-20
20
60
Tj / C
100
140
180
Iiso normalised to 25 C
1.5
1
0.5
-60
-20
20
60
Tj / C
100
140
180
Iisl normalised to 25 C
1.5
1
0.5
L
D.U.T.
VDD
RIS
R 01
shunt
VDS
-ID/100
+
-
VIS
0
P
D
S
I
TOPFET
ID
0
VDS
0
VDD
V(CL)DSS
Schottky
2
V
(
CL
)
DSS
/(
V
(
CL
)
DSS
V
DD
)
0
20
40
60
80
100
120
140
Tj / C
Idss
1 mA
100 uA
10 uA
1 uA
100 nA
typ.
0
2
4
6
8
10
VIS / V
VDDP(P) / V
BUK100-50GS
50
40
30
20
10
0
max
November 1996
9
Rev 1.300
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| BUK101-50GL | PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| BUK101-50GS | PowerMOS transistor TOPFET(功率MOS晶體管TOPFET) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BUK101-50 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK101-50DL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK101-50GL | 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK101-50GL,127 | 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK101-50GL/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR TO 220 TOPFET 5POLIG |
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