參數(shù)資料
型號(hào)： BUK100-50GS
廠商： NXP SEMICONDUCTORS
元件分類： 外設(shè)及接口
英文描述： PowerMOS transistor TOPFET(功率MOS晶體管邏輯電平TOPFET)
中文描述： 40 A BUF OR INV BASED PRPHL DRVR, PSFM3
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁數(shù)： 3/11頁
文件大?。?/td> 112K
代理商： BUK100-50GS
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET
BUK100-50GS
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
R
th j-mb
R
th j-a
Junction to mounting base
-
-
2.5
3.1
K/W
Junction to ambient
in free air
-
60
-
K/W
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(CL)DSS
V
(CL)DSS
Drain-source clamping voltage
V
IS
= 0 V; I
D
= 10 mA
V
IS
= 0 V; I
DM
= 1 A; t
p
≤
300
μ
s;
δ
≤
0.01
50
-
-
V
Drain-source clamping voltage
-
-
70
V
I
DSS
I
DSS
I
DSS
R
DS(ON)
Zero input voltage drain current V
DS
= 12 V; V
IS
= 0 V
Zero input voltage drain current V
DS
= 50 V; V
IS
= 0 V
Zero input voltage drain current V
DS
= 40 V; V
IS
= 0 V; T
j
= 125 C
Drain-source on-state
resistance
-
-
-
0.5
1
10
10
20
100
μ
A
μ
A
μ
A
m
m
I
DM
= 7.5 A;
t
p
≤
300
μ
s;
δ
≤
0.01
V
IS
= 10 V
V
IS
= 5 V
-
-
65
85
100
125
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input.
SYMBOL
PARAMETER
CONDITIONS
Short circuit load protection
1
T
mb
= 25 C; L
≤
10
μ
H
E
DS(TO)
Overload threshold energy
V
DD
= 13 V; V
IS
= 10 V
t
d sc
Response time
V
DD
= 13 V; V
IS
= 10 V
Over temperature protection
T
j(TO)
Threshold junction temperature V
IS
= 10 V; from I
D
≥
1 A
2
MIN.
TYP.
MAX.
UNIT
-
-
0.2
0.8
-
-
J
ms
150
-
-
C
INPUT CHARACTERISTICS
T
mb
= 25 C unless otherwise specified. The supply for the logic and overload protection is taken from the input.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
IS(TO)
I
IS
V
ISR
V
ISR
I
ISL
V
(BR)IS
R
IG
Input threshold voltage
Input supply current
Protection reset voltage
3
V
DS
= 5 V; I
D
= 1 mA
V
IS
= 10 V; normal operation
1.0
-
2.0
1.5
0.4
2.6
2.0
1.0
3.5
V
mA
V
Protection reset voltage
T
j
= 150 C
V
IS
= 10 V; protection latched
I
I
= 10 mA
to gate of power MOSFET
1.0
-
-
Input supply current
Input clamp voltage
Input series resistance
1.0
11
-
2.5
13
4
5.0
-
-
mA
V
k
1
The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for
P
DSM
, which is always the case when V
DS
is less than V
DSP
maximum. Refer to OVERLOAD PROTECTION LIMITING VALUES.
2
The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I
D
ensures this condition.
3
The input voltage below which the overload protection circuits will be reset.
November 1996
3
Rev 1.300
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK101-50 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET
BUK101-50DL 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET
BUK101-50GL 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK101-50GL,127 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK101-50GL/B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR TO 220 TOPFET 5POLIG
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