參數(shù)資料
型號(hào): BUK100-50GS
廠商: NXP SEMICONDUCTORS
元件分類: 外設(shè)及接口
英文描述: PowerMOS transistor TOPFET(功率MOS晶體管邏輯電平TOPFET)
中文描述: 40 A BUF OR INV BASED PRPHL DRVR, PSFM3
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁數(shù): 8/11頁
文件大?。?/td> 112K
代理商: BUK100-50GS
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET
BUK100-50GS
Fig.20. Test circuit for resistive load switching times.
Fig.21. Typical switching waveforms, resistive load.
V
DD
= 13 V; R
L
= 4
; R
I
= 50
, T
j
= 25 C.
Fig.22. Typical switching waveforms, resistive load.
V
DD
= 13 V; R
L
= 4
; R
I
= 50
, T
j
= 25 C.
Fig.23. Test circuit for inductive load switching times.
Fig.24. Typical switching waveforms, inductive load.
V
DD
= 13 V; I
D
= 3 A; R
I
= 50
, T
j
= 25 C.
Fig.25. Typical switching waveforms, inductive load.
V
DD
= 13 V; I
D
= 3 A; R
I
= 50
, T
j
= 25 C.
VDD
D.U.T.
R
0V
0R1
I
VIS
ID measure
D
S
I
TOPFET
P
RL
: adjust for correct ID
VDD = VCL
LD
D.U.T.
R
0V
tp
0R1
I
VIS
ID measure
D
S
I
TOPFET
P
0
10
20
RESISTIVE TURN-ON
time / us
BUK100-50GS
10
5
0
VIS / V
ID / A
VDS / V
10%
10%
td on
90%
tr
0
2
4
6
8
10
INDUCTIVE TURN-ON
time / us
BUK100-50GS
10
5
0
VIS / V
VDS
ID / A
10%
10%
90%
td on
tr
0
10
20
RESISTIVE TURN-OFF
time / us
BUK100-50GS
10
5
0
VIS / V
VDS / V
ID / A
90%
90%
td off
10%
tf
0
10
20
INDUCTIVE TURN-OFF
time / us
BUK100-50GS
15
10
5
0
VIS / V
VDS / V
ID / A
90%
90%
10%
td off
tf
November 1996
8
Rev 1.300
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BUK101-50 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET
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BUK101-50GL,127 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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