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參數(shù)資料
| 型號(hào)： | BUK100-50DL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| 中文描述： | 13.5 A, 50 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大?。?/td> | 84K |
| 代理商： | BUK100-50DL |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK100-50DL
Fig.6. Typical on-state characteristics, T
= 25 C.
ID = f(V
DS
); parameter V
IS
; t
p
= 2 ms
Fig.7. Typical on-state resistance, T
= 25 C.
R
DS(ON)
= f(I
D
); parameter V
IS
; t
p
= 2 ms
Fig.8. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)
25 C = f(T
j
); I
D
= 7.5 A; V
IS
= 5 V
Fig.9. Typical overload protection characteristics.
t
d sc
= f(P
DS
); conditions: V
IS
≥
4 V; T
j
= 25 C.
Fig.10. Normalised limiting overload dissipation.
P
DSM
% =100
P
DSM
/P
DSM
(25 C) = f(T
mb
)
Fig.11. Typical overload protection characteristics.
Conditions: V
DD
= 13 V; V
IS
= 5 V; SC load = 30 m
0
2
4
VDS / V
ID / A
BUK100-50DL
30
20
10
0
VIS / V =
4.5
5
5.5
6
4
3.5
3
0.01
1
PDS / kW
td sc / ms
BUK100-50DL
100
10
1
0.1
0.1
PDSM
0
20
ID / A
RDS(ON) / Ohm
BUK100-50DL
0.20
0.15
0.10
0.05
0
10
30
VIS / V =
5.5
6
5
4.5
4
3.5
-60
-40
-20
0
20
40
Tmb / C
60
80
100
120
140
PDSM%
120
100
80
60
40
20
0
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
a
Normalised RDS(ON) = f(Tj)
1.5
1.0
0.5
0
-60
-20
20
60
100
140
180
220
Tmb / C
Energy & Time
BUK100-50DL
1
0.5
0
Energy / J
Time / ms
Tj(TO)
November 1996
6
Rev 1.200
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| BUK100-50GL | PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| BUK100-50GS | PowerMOS transistor TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| BUK101-50DL | PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| BUK101-50GL | PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET) |
| BUK101-50GS | PowerMOS transistor TOPFET(功率MOS晶體管TOPFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK100-50GL | 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK100-50GL,127 | 功能描述:MOSFET RAIL TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK100-50GS | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET |
| BUK101-50 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK101-50DL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
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