參數(shù)資料
型號(hào)： BU1508DX
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 功率晶體管
英文描述： Silicon Diffused Power Transistor
中文描述： 8 A, 700 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, FULL PACK-3
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 64K
代理商： BU1508DX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1508DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
4.5
1.6
0.4
MAX.
1500
700
8
15
35
1.0
-
-
0.6
UNIT
V
V
A
A
W
V
A
V
μ
s
T
hs
≤
25 C
I
C
= 4.5 A; I
B
= 1.1 A
I
F
= 4.5 A
I
CM
= 4.5 A; I
B(end)
= 1.1 A
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
B(AV)
Reverse base current
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
8
15
4
6
100
5
35
150
150
UNIT
V
V
A
A
A
A
mA
A
W
C
C
average over any 20 ms period
T
hs
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
55
MAX.
3.6
-
UNIT
K/W
K/W
1 2 3
case
b
c
e
Rbe
1
Turn-off current.
September 1997
1
Rev 1.300
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