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參數(shù)資料
| 型號(hào)： | BTS660-P |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | ？9mOhm - Vbb（上）\u003d 5V的- 58V -的TO220 - 7 - 3？ |
| 文件頁數(shù)： | 9/16頁 |
| 文件大小： | 232K |
| 代理商： | BTS660-P |
Data Sheet BTS660P
Infineon Technologies AG
Page 9
2001-May-30
Overvoltage protection of logic part
+ V
bb
V
OUT
IN
bb
R
Signal GND
Logic
PROFET
V
Z,IS
R
IS
IN
R
IS
V
Z,IN
R
V
V
Z,VIS
R
bb
=
120
typ
.
,
V
Z,IN
=
V
Z,IS
=
74
V
typ.,
R
IS
=
1
k
nominal. Note that when overvoltage exceeds 79
V
typ.
a voltage above 5V can occur between IS and GND, if
R
V
, V
Z,VIS
are not used.
Reverse battery protection
Logic
IS
IN
IS
R
V
R
OUT
L
R
Power GND
Signal GND
Vbb
-
Power
Transistor
IN
R
bb
R
D
S
D
R
V
≥
1
k
,
R
IS
=
1
k
nominal. Add
R
IN
for reverse
battery protection in applications with
V
bb
above 16V
16)
;
recommended value: R
IN
+ R
0.1A
|
V
bb
| - 12V if D
S
is used).
IS
+ R
V
=
0.1A
|
V
bb
| - 12V if D
S
is not used (or R
IN
=
To minimize power dissipation at reverse battery
operation, the summarized current into the IN and IS
pin should be about 120mA. The current can be
provided by using a small signal diode D in parallel to
the input switch, by using a MOSFET input switch or by
proper adjusting the current through
R
IS
and
R
V
.
V
bb
disconnect with energized inductive
load
Provide a current path with load current capability by
using a diode, a Z-diode, or a varistor. (
V
ZL
<
70 V or
V
Zb
<
42 V if R
IN
=0). For higher clamp voltages
currents at IN and IS have to be limited to
250 mA.
Version a:
PROFET
V
IN
OUT
IS
bb
Vbb
V
ZL
Version b:
PROFET
V
IN
OUT
IS
bb
Vbb
V
Zb
Note that there is no reverse battery protection when
using a diode without additional Z-diode V
ZL
, V
Zb
.
Version c: Sometimes a neccessary voltage clamp is
given by non inductive loads R
L
connected to the same
switch and eliminates the need of clamping circuit:
PROFET
V
IN
OUT
IS
bb
Vbb
R
L
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTS660P E3180A | 功能描述:IC SWITCH PWR HISIDE TO220-7 SMD RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開關(guān) 系列:PROFET® 標(biāo)準(zhǔn)包裝:1,000 系列:- 類型:高端/低端驅(qū)動(dòng)器 輸入類型:SPI 輸出數(shù):8 導(dǎo)通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
| BTS660PE3180A | 功能描述:電源開關(guān) IC - POE / LAN Smart High Side High Current PROFET RoHS:否 制造商:Fairchild Semiconductor 開關(guān)數(shù)量:Single 開關(guān)配置:SPST 開啟電阻（最大值）:7.3 Ohms 串話: 帶寬: 開啟時(shí)間（最大值）:13 ns 關(guān)閉時(shí)間（最大值）:20 ns 切換電壓（最大）: 工作電源電壓:8 V to 26 V 最大工作溫度:+ 125 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220F-6 |
| BTS660P-E3180A | 制造商:Infineon Technologies AG 功能描述:Power Switch Hi Side 38A 8-Pin(7+Tab) TO-220 SMD T/R |
| BTS660PE3180ANTMA1 | 制造商:Infineon Technologies AG 功能描述:IC SWITCH PWR HISIDE TO220-7 SMD |
| BTS660PE3180AT | 制造商:Infineon Technologies AG 功能描述:Power Switch Hi Side 38A 8-Pin(7+Tab) TO-220 SMD T/R |
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