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參數(shù)資料
| 型號： | BTS660-P |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | ？9mOhm - Vbb（上）\u003d 5V的- 58V -的TO220 - 7 - 3？ |
| 文件頁數(shù)： | 4/16頁 |
| 文件大?。?/td> | 232K |
| 代理商： | BTS660-P |
Data Sheet BTS660P
Values
min
typ
Infineon Technologies AG
Page 4
2001-May-30
Parameter and Conditions
at
T
j
=
-40 ... +150
°C,
V
bb
=
24
V unless otherwise specified
Symbol
Unit
max
Inverse Load Current Operation
On-state resistance
(Pins 1,2,6,7 to pin 4)
V
bIN
=
12 V,
I
L
=
-
20
A
see diagram on page 10
Nominal inverse load current
(Pins 1,2,6,7 to Tab)
V
ON
=
-0.5
V,
T
c =
85
°C
10
Drain-source diode voltage
(V
out
> V
bb
)
I
L
=
-
20
A,
I
IN
= 0,
T
j
=
+150°C
T
j
=
25
°C:
T
j
=
150
°C:
R
ON(inv)
--
7.2
14.6
60
9
17
--
m
I
L(inv)
50
A
-
V
ON
--
0.6
0.7
mV
Operating Parameters
Operating voltage (
V
IN
=
0)
12
)
Undervoltage shutdown
13
)
Undervoltage start of charge pump
see diagram page
15
Overvoltage protection
14
)
I
bb
=
15
mA
Standby current
I
IN
=
0, V
bb
=35V
V
bb(on)
V
bIN(u)
5.0
1.5
--
58
4.5
V
V
3.0
V
bIN(ucp)
V
bIN(Z)
3.0
68
70
4.5
6.0
V
V
T
j
=-40°C:
T
j
=
25...+150°C:
T
j
=-40...+25°C:
T
j
=
150°C:
--
72
15
25
--
--
I
bb(off)
--
--
25
50
μ
A
12
)If the device is turned on before a V
bb
-decrease, the operating voltage range is extended down to
V
bIN(u)
.
For the voltage range 0..58 V the device is fully protected against overtemperature and short circuit.
13
)V
bIN
= V
bb
-
V
IN
see diagram on page 15. When
V
bIN
increases from less than V
bIN(u)
up to
V
bIN(ucp)
= 5
V
(typ.) the charge pump is not active and
V
OUT
≈
V
bb
-
3
V.
14
)
See also
V
ON(CL)
in circuit diagram on page 9.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTS660P E3180A | 功能描述:IC SWITCH PWR HISIDE TO220-7 SMD RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 內(nèi)部開關(guān) 系列:PROFET® 標(biāo)準(zhǔn)包裝:1,000 系列:- 類型:高端/低端驅(qū)動器 輸入類型:SPI 輸出數(shù):8 導(dǎo)通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
| BTS660PE3180A | 功能描述:電源開關(guān) IC - POE / LAN Smart High Side High Current PROFET RoHS:否 制造商:Fairchild Semiconductor 開關(guān)數(shù)量:Single 開關(guān)配置:SPST 開啟電阻（最大值）:7.3 Ohms 串話: 帶寬: 開啟時間（最大值）:13 ns 關(guān)閉時間（最大值）:20 ns 切換電壓（最大）: 工作電源電壓:8 V to 26 V 最大工作溫度:+ 125 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220F-6 |
| BTS660P-E3180A | 制造商:Infineon Technologies AG 功能描述:Power Switch Hi Side 38A 8-Pin(7+Tab) TO-220 SMD T/R |
| BTS660PE3180ANTMA1 | 制造商:Infineon Technologies AG 功能描述:IC SWITCH PWR HISIDE TO220-7 SMD |
| BTS660PE3180AT | 制造商:Infineon Technologies AG 功能描述:Power Switch Hi Side 38A 8-Pin(7+Tab) TO-220 SMD T/R |
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