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參數(shù)資料
| 型號(hào)： | BTS660-P |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | ？9mOhm - Vbb（上）\u003d 5V的- 58V -的TO220 - 7 - 3？ |
| 文件頁數(shù)： | 5/16頁 |
| 文件大小： | 232K |
| 代理商： | BTS660-P |
Data Sheet BTS660P
Parameter and Conditions
at
T
j
=
-40 ... +150
°C,
V
bb
=
24
V unless otherwise specified
Symbol
Values
typ
Unit
min
max
Infineon Technologies AG
Page 5
2001-May-30
Protection Functions
Short circuit current limit
(Tab to pins 1,2,6,7)
15)
V
ON
=
24
V, time until shutdown max. 300
μ
s
T
c
=-40°C:
see diagram page 8
T
c
=25°C:
T
c
=+150°C:
I
L(SC)
I
L(SC)
I
L(SC)
--
--
50
90
90
80
180
--
--
A
Short circuit shutdown delay after input current
positive slope,
V
ON
>
V
ON(SC)
min. value valid only if input "off-signal" time exceeds 30
μ
s
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
(e.g. overvoltage)
I
L
= 40 mA
Short circuit shutdown detection voltage
(pin 4 to pins 1,2,6,7)
Thermal overload trip temperature
Thermal hysteresis
t
d(SC)
80
--
350
μ
s
V
ON(CL)
62
65
69
V
V
ON(SC)
T
jt
T
jt
--
6
--
--
--
--
V
150
°C
K
--
10
Reverse Battery
Reverse battery voltage
16
)
On-state resistance
(Pins 1,2,6,7 to pin 4)
V
bb
=
-12V,
V
IN
=
0,
I
L
=
-
20
A,
R
IS
=
1
k
T
j
=
150
°C:
Integrated resistor in V
bb
line
T
j
=
25
°C:
T
j
=
150
°C:
-
V
bb
R
ON(rev)
--
--
--
42
V
T
j
=
25
°C:
8.8
--
10.5
20
m
R
bb
90
105
120
125
135
150
15
) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit by
permanent resetting the short circuit latch function. The lifetime will be reduced under such condition.
16
)The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
it is done with all polarity symmetric loads). Note that under off-conditions (
I
IN
=
I
IS
=
0) the power transistor
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! To reduce the
power dissipation at the integrated R
bb
resistor an input resistor is recommended as described on page 9.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTS660P E3180A | 功能描述:IC SWITCH PWR HISIDE TO220-7 SMD RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開關(guān) 系列:PROFET® 標(biāo)準(zhǔn)包裝:1,000 系列:- 類型:高端/低端驅(qū)動(dòng)器 輸入類型:SPI 輸出數(shù):8 導(dǎo)通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
| BTS660PE3180A | 功能描述:電源開關(guān) IC - POE / LAN Smart High Side High Current PROFET RoHS:否 制造商:Fairchild Semiconductor 開關(guān)數(shù)量:Single 開關(guān)配置:SPST 開啟電阻（最大值）:7.3 Ohms 串話: 帶寬: 開啟時(shí)間（最大值）:13 ns 關(guān)閉時(shí)間（最大值）:20 ns 切換電壓（最大）: 工作電源電壓:8 V to 26 V 最大工作溫度:+ 125 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220F-6 |
| BTS660P-E3180A | 制造商:Infineon Technologies AG 功能描述:Power Switch Hi Side 38A 8-Pin(7+Tab) TO-220 SMD T/R |
| BTS660PE3180ANTMA1 | 制造商:Infineon Technologies AG 功能描述:IC SWITCH PWR HISIDE TO220-7 SMD |
| BTS660PE3180AT | 制造商:Infineon Technologies AG 功能描述:Power Switch Hi Side 38A 8-Pin(7+Tab) TO-220 SMD T/R |
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