- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369534 > BTS660-P Transient Voltage Suppressor Diodes PDF資料下載
參數(shù)資料
| 型號： | BTS660-P |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | ？9mOhm - Vbb（上）\u003d 5V的- 58V -的TO220 - 7 - 3？ |
| 文件頁數(shù)： | 7/16頁 |
| 文件大?。?/td> | 232K |
| 代理商： | BTS660-P |
Data Sheet BTS660P
Infineon Technologies AG
Page 7
2001-May-30
Truth Table
Input
current
level
L
H
Output
Current
Sense
IIS
0
nominal
Remark
level
L
H
Normal
operation
Very high
load current
Current-
limitation
Short circuit to
GND
Over-
temperature
Short circuit to
V
bb
Open load
=I
L
/ k
ilis
, up to I
IS
=I
IS,lim
up to V
ON
=V
ON(Fold back)
I
IS
no longer proportional to I
L
V
ON
> V
ON(Fold back)
if V
ON
>V
ON(SC)
, shutdown will occure
H
H
I
IS, lim
H
H
0
L
H
L
H
L
H
L
H
L
L
L
L
L
H
H
0
0
0
0
0
<nominal
20
)
0
0
0
Z
21
)
H
L
Negative output
voltage clamp
Inverse load
current
L
H
H
H
0
0
L = "Low" Level
H = "High" Level
Overtemperature reset by cooling: Tj < Tjt (see diagram on page 15)
Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14)
20
)Low ohmic short to
V
may reduce the output current
I
and can thus be detected via the sense current
I
IS
.
21
)Power Transistor "OFF", potential defined by external impedance.
Terms
PROFET
V
IN
IS
OUT
bb
V
IN
I
IS
I
IN
Vbb
Ibb
IL
V
OUT
V
ON
3
5
4
1,2,6,7
R
IS
V
IS
V
bIN
R
IN
D
S
V
bIS
Two or more devices can easily be connected in
parallel to increase load current capability.
R
ON
measurement layout
Sense
contacts
bb
t
t
Out Force
contacts
(both out
pins parallel)
l
≤
5.5mm
Typical R
ON
for SMD version is about 0.2 m
less
than straight leads due to l
≈
2 mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BTS711-L1 | Transient Voltage Suppressor Diodes |
| BTS711L1Q67060-S7000-A2 | Transient Voltage Suppressor Diodes |
| BTS712-N1 | Transient Voltage Suppressor Diodes |
| BTS721-L1 | Transient Voltage Suppressor Diodes |
| BTS725-L1 | Transient Voltage Suppressor Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTS660P E3180A | 功能描述:IC SWITCH PWR HISIDE TO220-7 SMD RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 內(nèi)部開關(guān) 系列:PROFET® 標(biāo)準(zhǔn)包裝:1,000 系列:- 類型:高端/低端驅(qū)動器 輸入類型:SPI 輸出數(shù):8 導(dǎo)通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
| BTS660PE3180A | 功能描述:電源開關(guān) IC - POE / LAN Smart High Side High Current PROFET RoHS:否 制造商:Fairchild Semiconductor 開關(guān)數(shù)量:Single 開關(guān)配置:SPST 開啟電阻（最大值）:7.3 Ohms 串話: 帶寬: 開啟時間（最大值）:13 ns 關(guān)閉時間（最大值）:20 ns 切換電壓（最大）: 工作電源電壓:8 V to 26 V 最大工作溫度:+ 125 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220F-6 |
| BTS660P-E3180A | 制造商:Infineon Technologies AG 功能描述:Power Switch Hi Side 38A 8-Pin(7+Tab) TO-220 SMD T/R |
| BTS660PE3180ANTMA1 | 制造商:Infineon Technologies AG 功能描述:IC SWITCH PWR HISIDE TO220-7 SMD |
| BTS660PE3180AT | 制造商:Infineon Technologies AG 功能描述:Power Switch Hi Side 38A 8-Pin(7+Tab) TO-220 SMD T/R |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。