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參數(shù)資料
| 型號： | BTS555P |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 單外設(shè)驅(qū)動 |
| 文件頁數(shù)： | 7/15頁 |
| 文件大?。?/td> | 200K |
| 代理商： | BTS555P |
Data Sheet BTS550P
Infineon Technologies AG
Page 7
2000-Mar-24
Truth Table
Input
current
level
L
H
Output
Current
Sense
IIS
0
nominal
Remark
level
L
H
Normal
operation
Very high
load current
Current-
limitation
Short circuit to
GND
Over-
temperature
Short circuit to
V
bb
Open load
=I
L
/ k
ilis
, up to I
IS
=I
IS,lim
up to V
ON
=V
ON(Fold back)
I
IS
no longer proportional to I
L
V
ON
> V
ON(Fold back)
if V
ON
>V
ON(SC)
, shutdown will occure
H
H
I
IS, lim
H
H
0
L
H
L
H
L
H
L
H
L
L
L
L
L
H
H
0
0
0
0
0
<nominal
21)
0
0
0
Z
22)
H
L
Negative output
voltage clamp
Inverse load
current
L
H
H
H
0
0
L = "Low" Level
H = "High" Level
Options Overview
Type
BTS
550P
650P
555
Overtemperature protection with hysteresis
T
j >150
°
C, latch function
23
)
T
j >150
°
C, with auto-restart on cooling
Short circuit to GND protection
switches off when
V
ON
>6 V typ.
(when first turned on after approx. 180
μ
s)
Overvoltage shutdown
Output negative voltage transient limit
to
V
bb
- V
ON(CL)
to
V
OUT
= -19 V typ
Overtemperature reset by cooling: Tj < Tjt (see diagram on page 14)
Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 13)
X
X
X
X
X
X
-
-
X
X
X
24
)
X
24)
21
)Low ohmic short to
V
bb
may reduce the output current
I
L
and can thus be detected via the sense current
I
IS
.
22
)Power Transistor "OFF", potential defined by external impedance.
23
)Latch except when
V
bb
-
V
OUT
<
V
ON(SC)
after shutdown. In most cases
V
OUT
= 0 V after shutdown (
V
OUT
≠
0 V only if forced externally). So the device remains latched unless
V
bb
<
V
ON(SC)
(see page 5). No latch
between turn on and t
d(SC)
.
24
)Can be "switched off" by using a diode D
S
(see page 8) or leaving open the current sense output.
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