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參數(shù)資料
| 型號(hào)： | BTS555P |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 單外設(shè)驅(qū)動(dòng) |
| 文件頁(yè)數(shù)： | 6/15頁(yè) |
| 文件大?。?/td> | 200K |
| 代理商： | BTS555P |
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Data Sheet BTS550P
Values
min
typ
Parameter and Conditions
at
T
j
=
-40 ... +150
°
C,
V
bb
=
12
V unless otherwise specified
Symbol
Unit
max
Infineon Technologies AG
Page 6
2000-Mar-24
Diagnostic Characteristics
Current sense ratio,
static on-condition,
k
ILIS
=
I
L
:
I
IS
,
V
ON
<
1.5
V
18)
,
V
IS
<
V
OUT
-
5 v,
V
bIN
>
4.0
V
see diagram on page 11
I
L
=
120
A,
T
j
=-40
°
C:
T
j
=25
°
C:
T
j
=150
°
C:
I
L
=
20
A,
T
j
=-40
°
C:
T
j
=25
°
C:
T
j
=150
°
C:
I
L
=
12
A,
T
j
=-40
°
C:
T
j
=25
°
C:
T
j
=150
°
C:
I
L
=
6
A,
T
j
=-40
°
C:
T
j
=25
°
C:
T
j
=150
°
C:
k
ILIS
19 000
19 000
18 000
18 500
18 500
18 000
16 000
17 000
17 500
12 000
14 000
16 000
20 600
20 500
19 000
22 300
21 400
19 500
23 500
22 000
19 900
28 000
24 000
20 500
23 000
22 500
21 500
26 000
25 000
23 000
30 000
26 500
24 500
46 000
34 000
30 000
I
IS
=0
by
I
IN
=0
(e.g. during deenergizing of inductive loads)
:
Sense current saturation
Current sense leakage current
I
IS,lim
6.5
--
--
mA
I
IN
=
0:
V
IN
=
0,
I
L
≤
0:
I
IS(LL)
I
IS(LH)
t
s(IS)
V
bIS(Z)
--
--
--
--
2
--
--
0.5
--
μ
A
Current sense settling time
19
)
Overvoltage protection
I
bb
=
15
mA
500
μ
s
V
T
j
=-40
°
C:
T
j
=
25...+150
°
C:
60
62
64
--
--
Input
Input and operating current (see diagram page 12)
IN grounded (V
IN
=
0)
Input current for turn-off
20)
I
IN(on)
--
0.8
1.5
mA
I
IN(off)
--
--
80
μ
A
18)
If V
ON
is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see
I
IS,lim
.
19
)Not tested, specified by design.
20
)We recommend the resistance between IN and GND to be less than 0.5
k
for turn-on and more than
500
k
for turn-off. Consider that when the device is switched off (I
IN
=
0) the voltage between IN and GND
reaches almost V
bb
.
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