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參數(shù)資料
| 型號： | BTS555P |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | 單外設驅(qū)動 |
| 文件頁數(shù)： | 10/15頁 |
| 文件大?。?/td> | 200K |
| 代理商： | BTS555P |
Data Sheet BTS550P
Infineon Technologies AG
Page 10
2000-Mar-24
Inverse load current operation
PROFET
V
IN
OUT
IS
bb
V
bb
V
OUT
- I
L
R
IS
V
IS
V
IN
+
-
+
-
I
IS
The device is specified for inverse load current
operation (
V
OUT
>
V
bb
> 0V
). The current sense
feature is not available during this kind of operation
(
I
IS
= 0). With
I
IN
= 0 (e.g. input open) only the intrin-
sic drain source diode is conducting resulting in
considerably increased power dissipation. If the
device is switched on (V
IN
= 0), this power
dissipation is decreased to the much lower value
R
ON(INV)
*
I
2
(specifications see page 4).
Note:
Temperature protection during inverse load
current operation is not possible!
Inductive load switch-off energy
dissipation
E
bb
PROFET
V
IN
OUT
IS
bb
E
E
EAS
L
R
ELoad
L
R
L
{
Z
L
R
IS
I
IN
V
bb
i (t)
Energy stored in load inductance:
E
L
=
1/2
·
L
·
I
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
= V
ON(CL)
·
i
L
(t) dt,
with an approximate solution for RL
>
0
:
E
AS
= I
L
·
L
2
·
R
L
(
V
bb
+
|V
OUT(CL)
|)
ln
(1+
I
L
·
R
L
|V
OUT(CL)
| )
Maximum allowable load inductance for
a single switch off
L = f (IL );
Tj,start =
150
°
C, Vbb =
12
V, RL =
0
L [μH]
IL [A]
Externally adjustable current limit
If the device is conducting, the sense current can be
used to reduce the short circuit current and allow
higher lead inductance (see diagram above). The
device will be turned off, if the threshold voltage of
T2 is reached by I
S
*R
IS
. After a delay time defined
by R
V
*C
V
T1 will be reset. The device is turned on
again, the short circuit current is defined by I
L(SC)
and
the device is shut down after t
d(SC)
with latch
function.
PROFET
IS
IN
IS
R
V
R
Power
GND
Signal
GND
Vbb
OUT
V
C
load
R
T1
T2
IN
Signal
Vbb
1
10
100
1000
10000
100000
1
10
100
1000
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