參數(shù)資料
型號(hào)： BT168G
廠商： NXP Semiconductors N.V.
元件分類： 參考電壓二極管
英文描述： SCR
封裝： BT168G<SOT54 (SOT54)|<<http://www.nxp.com/packages/SOT54.html<1<week 5, 2005,;
文件頁(yè)數(shù)： 10/15頁(yè)
文件大?。?/td> 107K
代理商： BT168G
PCBs were made relatively large at 100mm x
100mm to ensure that R
th
is controlled by pad area
and not by PCB area.
Thyristors were tested using a purpose built thermal
resistance test gear. (Thyristors were tested in
preference to triacs because they only require one
measurement for each power setting, whereas triacs
need measuring in both directions with the average
power being calculated from the results.)
The most important fact to remember when
conducting the tests was that they take a lot of time.
It was essential to ensure that thermal equilibrium
and stability had been reached before readings were
taken at elevated device temperature. Rushing the
tests would give incorrect results and improbable
graphs. This was learned from experience.
Results
The resolution and accuracy of the final R
th j-a
results
were maximised by generating high values of
T
j
,
hence large measured
V. The results tables show
R
th j-a
(K/W) versus power dissipation and pad area.
The power levels highlighted by an asterisk indicate
a suggested power dissipation limit for the package
when soldered to the minimum pad area on FR4
PCB. (In the case of the SOT223 package, the
smallest pad area used was 20mm
2
. This area is fully
occupied by the SOT428 package. The minimum for
SOT223 is actually 5.7mm
2
. Therefore the 1W power
dissipation achieved in these experiments will be
higher than that achievable with a 5.7mm
2
pad. 0.5W
is likely to be a practical maximum power dissipation
for SOT223 on a 5.7mm
2
pad.)
The results graphs show R
th j-a
versus pad area and
T
j
versus pad area. For any given package, higher
power dissipation leads to higher
T
j
which leads to
lower R
th j-a
. This is because a larger temperature
difference results in more efficient radiation to
ambient.
SOT223
Area (mm
2
)
0.5W
1.0W*
1.5W
20
110
110
-
49
99
98
-
81
91
90
90
144
88
87
86
256
78
79
78
484
73
74
73
900
68
69
69
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BT168G,112 功能描述:SCR BULK MOSFET RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
BT168GW 制造商:NXP Semiconductors 功能描述:THYRISTOR 1A 600V SOT-223 制造商:NXP Semiconductors 功能描述:THYRISTOR, 1A, 600V, SOT-223 制造商:NXP Semiconductors 功能描述:THYRISTOR, 1A, 600V, SOT-223; Peak Repetitive Off-State Voltage, Vdrm:600V; Gate Trigger Current Max, Igt:200A; Current It av:0.63A; On State RMS Current IT(rms):1A; Peak Non Rep Surge Current Itsm 50Hz:8A; Holding Current Max ;RoHS Compliant: Yes 制造商:NXP Semiconductors 功能描述:Thyristor,600V,1A,BT168GW
BT168GW,115 功能描述:SCR TAPE-7 TRIAC RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
BT168GWF 制造商:NXP Semiconductors 功能描述:THYRISTOR600VSOT223 制造商:NXP Semiconductors 功能描述:THYRISTOR,600V,SOT223 制造商:NXP Semiconductors 功能描述:THYRISTOR,600V,SOT223; Peak Repetitive Off-State Voltage, Vdrm:600V; Gate Trigger Current Max, Igt:200A; Current It av:630mA; On State RMS Current IT(rms):1A; Peak Non Rep Surge Current Itsm 50Hz:8A; Holding Current Max Ih:10mA; ;RoHS Compliant: Yes
BT168GWF,115 功能描述:SCR 600V 1A SOT223 RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
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