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參數(shù)資料
| 型號： | BSS84DW |
| 廠商： | Diodes Inc. |
| 英文描述： | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 雙P溝道增強(qiáng)型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 48K |
| 代理商： | BSS84DW |
DS30204 Rev. C-2
1 of 2
BSS84DW
BSS84DW
DUAL P-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
BSS84DW
Units
Drain-Source Voltage
V
DSS
-50
V
Drain-Gate Voltage(Note 3)
V
DGR
-50
V
Gate-Source Voltage
Continuous
V
GSS
20
V
Drain Current (Note 1)
Continuous
I
D
-130
mA
Total Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance, Junction to Ambient
R
JA
625
C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
C
Case: SOT-363, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking: KXX: Product marking code
YY: Date code
Marking Code: K84
Weight: 0.006 grams (approx.)
Mechanical Data
A
M
J
L
F
D
B C
H
K
KXX YY
K
G
1
S
1
S
2
G
2
D
1
D
2
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
All Dimensions in mm
S
1
D
1
D
2
S
2
G
1
G
2
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width
300 s, duty cycle
3. R
GS
20K .
2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BSS84DW _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BSS84DW_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BSS84DW_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BSS84DW_2 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BSS84DW-7 | 功能描述:MOSFET -50V 200mW RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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