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參數(shù)資料
| 型號(hào)： | BSS84W |
| 廠商： | Diodes Inc. |
| 元件分類： | 功率晶體管 |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | P溝道增強(qiáng)型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 56K |
| 代理商： | BSS84W |
DS30205 Rev. A-2
1 of 1
BSS84W
BSS84W
P-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
BSS84W
Units
Drain-Source Voltage
V
DSS
-50
V
Drain-Gate Voltage (Note 3)
V
DGR
-50
V
Gate-Source Voltage
Continuous
V
GSS
20
V
Drain Current (Note 1)
Continuous
I
D
-130
mA
Total Power Dissipation (Note 1)
P
d
200
mW
Thermal Resistance, Junction to Ambient
R
JA
625
C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
C
Case: SOT-323, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking Code: K84
Weight: 0.006 grams (approx.)
Mechanical Data
A
E
J
L
M
B
C
H
G
D
K
TOP VIEW
D
S
G
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
BV
DSS
-50
-75
V
V
GS
= 0V, I
D
= -250 A
V
DS
= -50V, V
GS
= 0V, T
J
= 25 C
V
DS
= -50V, V
GS
= 0V, T
J
= 125 C
V
DS
= -25V, V
GS
= 0V, T
J
= 25 C
Zero Gate Voltage Drain Current
I
DSS
-15
-60
-100
μA
μA
nA
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
I
GSS
10
nA
V
GS
= 20V, V
DS
= 0V
V
GS(th)
R
DS (ON)
g
FS
-0.8
-1.6
6
-2.0
10
V
V
DS
= V
GS
, I
D
= -1mA
V
GS
= -5V, I
D
= 0.100A
V
DS
= -25V, I
D
= 0.1A
.05
S
C
iss
C
oss
C
rss
45
25
12
pF
pF
pF
V
= -25V, V
GS
= 0V
f = 1.0MHz
t
D(ON)
t
D(OFF)
10
18
ns
ns
V
DD
= -30V, I
D
= -0.27A,
R
GEN
= 50 , V
GS
= -10V
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width
300 s, duty cycle
2
N
SOT-323
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
All Dimensions in mm
Max
0.30
0.40
1.15
1.35
2.00
2.20
0.65 Nominal
0.30
0.40
1.20
1.40
1.80
2.20
0.0
0.10
0.90
1.00
0.25
0.40
0.10
0.25
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| BSS84W _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
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| BSS84W_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BSS84W_2 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BSS84W7 | 制造商:Diodes Incorporated 功能描述: |
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