參數(shù)資料
型號(hào): BSPD25N06S2-40
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 29A I(D) | TO-252AA
中文描述: 晶體管| MOSFET的| N溝道| 55V的五(巴西)直|第29A條(丁)|對(duì)252AA
文件頁數(shù): 7/8頁
文件大?。?/td> 587K
代理商: BSPD25N06S2-40
2002-06-10
Page 7
SPD25N06S2-40
13 Typ. avalanche energy
E
AS
=
f
(
T
j
)
par.:
ID
=25A,
V
DD
= 25 V,
R
GS
= 25
25
45
65
85
105
125
145
°C
185
T
j
0
10
20
30
40
50
60
mJ
80
E
A
14 Typ. gate charge
V
GS
=
f
(
Q
Gate
)
parameter:
I
D
= 29 A pulsed
0
2
4
6
8
10
12
14
16
nC
Q
Gate
19
0
2
4
6
8
10
12
V
16
SPD25N06S2-40
V
G
0,8
V
DS max
DS max
V
0,2
15 Drain-source breakdown voltage
V
(BR)DSS
=
f
(
T
j
)
parameter:
I
D
=10 mA
-60
-20
20
60
100
140
°C
T
j
200
50
52
54
56
58
60
62
V
66
SPD25N06S2-40
V
(
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