參數(shù)資料
型號(hào): BSPD25N06S2-40
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 29A I(D) | TO-252AA
中文描述: 晶體管| MOSFET的| N溝道| 55V的五(巴西)直|第29A條(?。﹟對(duì)252AA
文件頁(yè)數(shù): 6/8頁(yè)
文件大?。?/td> 587K
代理商: BSPD25N06S2-40
2002-06-10
Page 6
SPD25N06S2-40
9 Drain-source on-resistance
R
DS(on)
= f(
T
j)
parameter:
I
D
= 13 A,
V
GS
= 10 V
-60
-20
20
60
100
°C
180
T
j
0
10
20
30
40
50
60
70
m
90
R
D
98 %
typ.
10 Typ. gate threshold voltage
V
GS(th)
=
f
(
T
j)
parameter:
V
GS
=
V
DS
-60
-20
20
60
100
°C
180
T
j
1.5
2
2.5
3
V
4
V
G
26
A
130 A
11 Typ. capacitances
C
=
f
(
V
DS
)
parameter:
V
GS
=0V,
f
=1 MHz
0
5
10
15
20
V
30
V
DS
1
10
2
10
3
10
4
10
pF
C
C
iss
C
oss
C
rss
12 Forward character. of reverse diode
I
F
=
f
(V
SD
)
parameter:
T
j , t
p
= 80 μs
3
10
0
0.4
0.8
1.2
1.6
2
2.4
V
3
V
SD
0
10
1
10
2
10
A
SPD25N06S2-40
I
F
T
j
= 25 °C typ
T
j
= 175 °C typ
T
j
= 25 °C (98%)
T
j
= 175 °C (98%)
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