參數(shù)資料
型號: BSPD25N06S2-40
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 29A I(D) | TO-252AA
中文描述: 晶體管| MOSFET的| N溝道| 55V的五(巴西)直|第29A條(?。﹟對252AA
文件頁數(shù): 5/8頁
文件大?。?/td> 587K
代理商: BSPD25N06S2-40
2002-06-10
Page 5
SPD25N06S2-40
5 Typ. output characteristic
I
D
=
f
(
V
DS
);
T
j
=25°C
parameter:
t
p
= 80 μs
0
0.5
1
1.5
2
2.5
3
3.5
4
V
V
DS
5
0
5
10
15
20
25
30
35
40
45
50
A
60
I
D
Vgs = 4.5V
Vgs = 5V
Vgs = 5.5V
Vgs = 6V
Vgs = 6.5V
Vgs = 7V
Vgs = 7.5V
Vgs = 10V
6 Typ. drain-source on resistance
R
DS(on)
=
f
(
I
D
)
parameter:
V
GS
0
10
20
30
40
A
60
I
D
20
30
40
50
60
70
80
90
100
m
120
R
D
Vgs=5V
Vgs=5.5V
Vgs=6V
Vgs=6.5V
Vgs=7V
Vgs=7.5V
Vgs=10V
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
);
V
DS
2 x
I
D
x
R
DS(on)max
parameter:
t
p
= 80 μs
0
1
2
3
4
5
6
V
8
V
GS
0
5
10
15
20
25
30
35
40
A
50
I
D
8 Typ. forward transconductance
g
fs
= f(
I
D
);
T
j
=25°C
parameter:
g
fs
0
4
8
12
16
20
24
A
32
I
D
0
2
4
6
8
10
12
14
16
S
20
g
f
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