- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369501 > BSP30 (意法半導(dǎo)體) MEDIUM POWER AMPLIFIER PDF資料下載
參數(shù)資料
| 型號： | BSP30 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | MEDIUM POWER AMPLIFIER |
| 中文描述： | 中功率功率放大器 |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 76K |
| 代理商： | BSP30 |
1999-09-22
Page 9
BSP308
Preliminary data
Published by
Infineon Technologies AG
,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BSP30 | Surface mount Si-Epitaxial PlanarTransistors |
| BSP317Q67000-S94 | TRANSISTOR MOSFET SMD SOT 223 |
| BSP318 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.6A I(D) | SOT-223 |
| BSP31 | MEDIUM POWER AMPLIFIER |
| BSP31 | Surface mount Si-Epitaxial PlanarTransistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BSP300 | 制造商:Infineon Technologies AG 功能描述:MOSFET N-Channel 800V 0.19A SOT223 |
| BSP300 E6327 | 功能描述:MOSFET N-CH 800V 190MA SOT-223 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:SIPMOS® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| BSP300 L6327 | 功能描述:MOSFET SIPMOS SM-Signal Transistor 800V .19A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSP300_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Small-Signal Transistor |
| BSP300E6327NT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 800V 0.19A 4-Pin(3+Tab) SOT-223 T/R |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。