參數(shù)資料
型號(hào): BSP296Q67000-S067
英文描述: TRANSISTOR MOSFET SMD SOT 223
中文描述: 晶體管MOSFET的貼片采用SOT 223
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 118K
代理商: BSP296Q67000-S067
BSP 297
Data Sheet
3
05.99
Electrical Characteristics,
at
T
j
= 25C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
V
DS
2
*
I
D *
R
DS(on)max,
I
D
= 0.65 A
Input capacitance
g
fs
0.5
1.15
-
S
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
C
iss
-
300
400
pF
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
C
oss
-
40
60
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
C
rss
-
20
30
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.29 A
R
GS
= 50
Rise time
t
d(on)
-
8
12
ns
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.29 A
R
GS
= 50
Turn-off delay time
t
r
-
15
25
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.29 A
R
GS
= 50
Fall time
t
d(off)
-
120
160
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.29 A
R
GS
= 50
t
f
-
50
70
相關(guān)PDF資料
PDF描述
BSP304 P-channel enhancement mode vertical D-MOS transistors(P溝道增強(qiáng)型垂直D-MOS晶體管)
BSP304A P-channel enhancement mode vertical D-MOS transistors(P溝道增強(qiáng)型垂直D-MOS晶體管)
BSP308 ?Small Signal MOSFET.30V. SOT-223. RDSon = 75mOhm. 4.7A. LL ?
BSP30 MEDIUM POWER AMPLIFIER
BSP30 Surface mount Si-Epitaxial PlanarTransistors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BSP297 制造商:Infineon Technologies 功能描述:Bulk 制造商:Infineon Technologies AG 功能描述:MOSFET N LOGIC SOT-223 制造商:Infineon Technologies AG 功能描述:MOSFET, N, LOGIC, SOT-223 制造商:Infineon Technologies AG 功能描述:N CH MOSFET, 200V, 600mA, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V ;RoHS Compliant: Yes
BSP297 E6327 功能描述:MOSFET N-CH 200V 660MA SOT-223 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:SIPMOS® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
BSP297 L6327 功能描述:MOSFET SIPMOS SM-Signal Transistor 200V .66A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BSP297 制造商:Infineon Technologies AG 功能描述:MOSFET N LOGIC SOT-223
BSP297_09 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:SIPMOS Small-Signal-Transistor