參數(shù)資料
型號(hào)： BSO215C
英文描述： High Voltage Fast Recovery Rectifier Diodes
中文描述： ？SIPMOS?；パa(bǔ)。 20V的。 SO - 8封裝。導(dǎo)通狀態(tài)（N / P系列）\u003d 0.10/0.10Ohm。編號(hào)（北）\u003d 3.7A。編號(hào)（規(guī)劃）\u003d - 3.7A。當(dāng)?shù)毓蛦T？
文件頁(yè)數(shù)： 2/13頁(yè)
文件大?。?/td> 153K
代理商： BSO215C
1999-09-22
Page 2
Preliminary data
BSO 215 C
Termal Characteristics
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Thermal resistance, junction - soldering point
N
P
R
thJS
-
-
-
-
40
40
K/W
SMD version, device on PCB:
@ min. footprint; t
≤
10 sec.
@ 6 cm
2
cooling area
1)
; t
≤
10 sec.
@ min. footprint; t
≤
10 sec.
@ 6 cm
2
cooling area
1)
; t
≤
10 sec.
N
N
P
P
R
thJA
-
-
-
-
-
-
-
-
110
62.5
100
62.5
Static Characteristics
, at T
j
= 25 °C, unless otherwise specified
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 250 μA
V
GS
= 0 V,
I
D
= -250 μA
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 10 μA
I
D
= -450 μA
Zero gate voltage drain current
V
DS
= 20 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 20 V,
V
GS
= 0 V,
T
j
= 125 °C
V
DS
= -20 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= -20 V,
V
GS
= 0 V,
T
j
= 125 °C
N
P
V
(BR)DSS
20
-20
-
-
-
-
V
N
P
V
GS(th)
1.2
-1
1.5
-1.5
2
-2
N
N
P
P
I
DSS
-
-
-
-
0.1
10
-0.1
-10
1
100
-1
-100
μA
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
V
GS
= -20 V,
V
DS
= 0 V
Drain-Source on-state resistance
V
GS
= 4.5 V,
I
D
= 3 A
V
GS
= -4.5 V,
I
D
= -3 A
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 3.7 A
V
GS
= -10 V ,
I
D
= -3.7 A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2
(one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
N
P
I
GSS
-
-
10
-10
100
-100
nA
N
P
R
DS(on)
-
-
0.1
0.1
0.15
0.15
N
P
R
DS(on)
-
-
0.05
0.06
0.1
0.1
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