參數(shù)資料
型號: BSO215C
英文描述: High Voltage Fast Recovery Rectifier Diodes
中文描述: ?SIPMOS。互補(bǔ)。 20V的。 SO - 8封裝。導(dǎo)通狀態(tài)(N / P系列)\u003d 0.10/0.10Ohm。編號(北)\u003d 3.7A。編號(規(guī)劃)\u003d - 3.7A。當(dāng)?shù)毓蛦T?
文件頁數(shù): 10/13頁
文件大?。?/td> 153K
代理商: BSO215C
1999-09-22
Page 10
Preliminary data
BSO 215 C
Typ. capacitances
(N-Ch.)
C= f(V
DS
)
parameter: V
GS
=0 V, f=1 MHz
0
5
10
15
V
25
V
DS
1
10
2
10
3
10
pF
C
iss
C
oss
C
rss
Typ. capacitances
(P-Ch.)
C = (V
DS
)
parameter: V
GS
=0 V, f=1 MHz
0
-5
-10
-15
V
-25
V
DS
1
10
2
10
3
10
4
10
pF
C
oss
C
iss
C
rss
Forward characteristics of reverse diode
I
F
= f(V
SD
), (N-Ch.)
p
= 80 μs
1
10
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
V
SD
-2
10
-1
10
0
10
A
BSO 215 C
I
F
T
j
= 25 °C typ
T
j
= 150 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C (98%)
Forward characteristics of reverse diode
I
F
= f(V
SD
), (P-Ch.)
parameter: T
j
, t
p
= 80 μs
BSO 215 C
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
V
-3.0
V
SD
-2
-10
-1
-10
0
-10
1
-10
A
I
F
T
j
= 25 °C typ
T
j
= 150 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C (98%)
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