參數(shù)資料
型號(hào)： BSM35GP120G
英文描述： IGBT Module
中文描述： IGBT模塊
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 94K
代理商： BSM35GP120G
Technische Information / Technical Information
BSM35GD120DLC E3224
IGBT-Module
IGBT-Modules
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Einschaltverzgerungszeit (ind. Last)
turn on delay time (inductive load)
I
C
= 35A, V
CC
= 600V
V
GE
= ±15V, R
G
= 22
, T
vj
= 25°C
t
d,on
-
0,05
-
μs
V
GE
= ±15V, R
G
= 22
, T
vj
= 125°C
-
0,06
-
μs
Anstiegszeit (induktive Last)
rise time (inductive load)
I
C
= 35A, V
CC
= 600V
V
GE
= ±15V, R
G
= 22
, T
vj
= 25°C
t
r
-
0,05
-
μs
V
GE
= ±15V, R
G
= 22
, T
vj
= 125°C
-
0,05
-
μs
Abschaltverzgerungszeit (ind. Last)
turn off delay time (inductive load)
I
C
= 35A, V
CC
= 600V
V
GE
= ±15V, R
G
= 22
, T
vj
= 25°C
t
d,off
-
0,25
-
μs
V
GE
= ±15V, R
G
= 22
, T
vj
= 125°C
-
0,3
-
μs
Fallzeit (induktive Last)
fall time (inductive load)
I
C
= 35A, V
CC
= 600V
V
GE
= ±15V, R
G
= 22
, T
vj
= 25°C
t
f
-
0,03
-
μs
V
GE
= ±15V, R
G
= 22
, T
vj
= 125°C
-
0,07
-
μs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I
C
= 35A, V
CC
= 600V, V
GE
= 15V
R
G
= 22
, T
vj
= 125°C, L
S
= 120nH
E
on
-
4,5
-
mWs
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I
C
= 35A, V
CC
= 600V, V
GE
= 15V
R
G
= 22
, T
vj
= 125°C, L
S
=120nH
E
off
-
4,3
-
mWs
Kurzschluverhalten
SC Data
t
P
≤
10μsec, V
GE
≤
15V, R
G
= 22
T
Vj
≤
125°C, V
CC
=900V, V
CEmax
=V
CES
-L
sCE
·dI/dt
I
SC
-
320
-
A
Modulinduktivitt
stray inductance module
L
sCE
-
60
-
nH
Modul Leitungswiderstand, Anschlüsse – Chip
module lead resistance, terminals – chip
T
C
=25°C
R
CC‘+EE‘
-
8,0
-
m
Charakteristische Werte / Characteristic values
Diode / Diode
min.
typ.
max.
Durchlaspannung
forward voltage
I
F
= 35A, V
GE
= 0V, T
vj
= 25°C
V
F
-
1,8
2,3
V
I
F
= 35A, V
GE
= 0V, T
vj
= 125°C
-
1,7
2,2
V
Rückstromspitze
peak reverse recovery current
I
F
= 35A, - di
F
/dt = 900A/μsec
V
R
= 600V, VGE = -15V, T
vj
= 25°C
I
RM
-
36
-
A
V
R
= 600V, VGE = -15V, T
vj
= 125°C
-
45
-
A
Sperrverzgerungsladung
recovered charge
I
F
= 35A, - di
F
/dt = 900A/μsec
V
R
= 600V, VGE = -15V, T
vj
= 25°C
Q
r
-
3,6
-
μAs
V
R
= 600V, VGE = -15V, T
vj
= 125°C
-
7,6
-
μAs
Abschaltenergie pro Puls
reverse recovery energy
I
F
= 35A, - di
F
/dt = 900A/μsec
V
R
= 600V, VGE = -15V, T
vj
= 25°C
E
rec
-
1,3
-
mWs
V
R
= 600V, VGE = -15V, T
vj
= 125°C
-
2,8
-
mWs
2(8)
Seriendatenblatt_BSM35GD120DLC-E3224.xls
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