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參數(shù)資料
| 型號： | BS62LV2007 |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| 中文描述： | 非常低功率/電壓CMOS SRAM的256K × 8位 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 195K |
| 代理商： | BS62LV2007 |
R0201-BS62LV2007
Revision 2.0
April 2002
3
BS62LV2007
BSI
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1)
MAX.
UNITS
VDR
Vcc for Data Retention
CE1
Vcc - 0.2V, CE2
0.2V,
VIN
Vcc - 0.2V or VIN
0.2V
1.5
--
V
ICCDR
Data Retention Current
CE1
Vcc - 0.2V, CE2
0.2V,
VIN
Vcc - 0.2V or VIN
0.2V
--
0.01
0.5
uA
tCDR
Chip Deselect to Data
Retention Time
0
--
ns
tR
Operation Recovery Time
See Retention Waveform
TRC
(2)
--
ns
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
MIN. TYP. (1) MAX.
UNITS
Vcc=3.0V
VIL
Guaranteed Input Low
Voltage
(2)
Vcc=5.0V
-0.5
--
0.8
V
Vcc=3.0V
2.0
VIH
Guaranteed Input High
Voltage
(2)
Vcc=5.0V
2.2
--
Vcc+0.2
V
IIL
Input Leakage Current
Vcc = Max, VIN = 0V to Vcc
--
1
uA
IOL
Output Leakage Current
Vcc = Max, CE1= VIH, CE2= VIL, or
OE = VIH, VI/O = 0V to Vcc
--
1
uA
Vcc=3.0V
VOL
Output Low Voltage
Vcc = Max, IOL = 2mA
Vcc=5.0V
--
0.4
V
Vcc=3.0V
VOH
Output High Voltage
Vcc = Min, IOH = -1mA
Vcc=5.0V
2.4
--
V
Vcc=3.0V
--
20
ICC
Operating Power Supply
Current
CE1 = VIL, or CE2 = VIH,
IDQ = 0mA, F = Fmax
(3)
Vcc=5.0V
--
35
mA
Vcc=3.0V
--
1
ICCSB
Standby Current-TTL
CE1 = VIH, or CE2 = VIL,
IDQ = 0mA, F = Fmax
(3)
Vcc=5.0V
--
2
mA
Vcc=3.0V
--
0.1
0.7
ICCSB1
Standby Current-CMOS
CE1 Vcc-0.2V, CE2 0.2V,
VIN Vcc-0.2V or VIN 0.2V
Vcc=5.0V
--
0.6
6
uA
1. Typical characteristics are at TA = 25oC.
3. Fmax = 1/t
RC .
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
DATA RETENTION CHARACTERISTICS ( TA = 0oC to + 70oC )
1. Vcc = 1.5V, TA = + 25OC
2. t
RC = Read Cycle Time
DC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC )
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
CE1
Data Retention Mode
Vcc
t CDR
Vcc
t R
VIH
Vcc
VDR
1.5V
≥
CE1
Vcc - 0.2V
≥
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
CE2
Data Retention Mode
Vcc
t CDR
Vcc
t R
VIL
Vcc
VDR
1.5V
CE2
0.2V
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| BS62LV2007HC | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2007HI | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2008 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2008DC | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2008DC-55 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
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