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參數(shù)資料
| 型號(hào)： | BS62LV2007 |
| 廠(chǎng)商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| 中文描述： | 非常低功率/電壓CMOS SRAM的256K × 8位 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 195K |
| 代理商： | BS62LV2007 |
R0201-BS62LV2007
Revision 2.0
April 2002
1
BS62LV2007
PIN CONFIGURATIONS
A17
Very Low Power/Voltage CMOS SRAM
256K X 8 bit
Wide Vcc operation voltage : 2.4V ~ 5.5V
Very low power consumption :
Vcc = 3.0V
C-grade : 20mA (Max.) operating current
I- grade : 25mA (Max.) operating current
0.1uA (Typ.) CMOS standby current
Vcc = 5.0V
C-grade : 35mA (Max.) operating current
I- grade : 40mA (Max.) operating current
0.6uA (Typ.) CMOS standby current
High speed access time :
-70
70ns(Max.) at Vcc = 3.0V
-10
100ns(Max.) at Vcc = 3.0V
Automatic power down when chip is deselected
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
Easy expansion with CE2, CE1, and OE options
The BS62LV2007 is a high performance, very low power CMOS
Static Random Access Memory organized as 262,144 words by 8 bits
and operates in a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current of
0.1uA and maximum access time of 70ns in 3V operation.
Easy memory expansion is provided by an active LOW chip
enable (CE1), an active HIGH chip enable (CE2), and active LOW
output enable (OE) and three-state output drivers.
The BS62LV2007 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV2007 is available in the JEDEC standard 36 pin
Mini BGA 6x8 mm.
DESCRIPTION
FEATURES
BLOCK DIAGRAM
PRODUCT FAMILY
Brilliance Semiconductor Inc. reserves the right to modify document contents without notice.
Address
Input
Buffer
Row
Decoder
Memory Array
1024 x 2048
Column I/O
Sense Amp
Write Driver
Column Decoder
Data
Buffer
Output
Address Input Buffer
A8 A3 A2 A1
A10
Data
Buffer
Input
Control
Gnd
Vdd
OE
DQ7
DQ6
DQ5
DQ4
A16
A6
A7
A15
8
DQ3
DQ2
DQ1
DQ0
A5
A4
A13
16
256
2048
1024
20
A14
A12
A9
A11
A0
OE
WE
CE1
CE2
BSI
POWER DISSIPATION
SPEED
(ns)
STANDBY
(ICCSB1, Max)
Operating
(ICC, Max)
PRODUCT
FAMILY
OPERATING
TEMPERATURE
Vcc
RANGE
Vcc=
3.0V
Vcc=
5.0V
Vcc=
3.0V
Vcc=
5.0V
Vcc=
3.0V
PKG
TYPE
BS62LV2007HC
0
O C to +70 O C
70/100
6 uA
0.7 uA
35 mA
20 mA
BS62LV2007HI
-40
O C to +85 O C
2.4V ~5.5V
70/100
25 uA
1.5 uA
40 mA
25 mA
BGA-36-
0608
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BS62LV2007HC | 制造商:BSI 制造商全稱(chēng):Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2007HI | 制造商:BSI 制造商全稱(chēng):Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2008 | 制造商:BSI 制造商全稱(chēng):Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2008DC | 制造商:BSI 制造商全稱(chēng):Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2008DC-55 | 制造商:BSI 制造商全稱(chēng):Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
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