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參數(shù)資料
| 型號： | BLW60C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-120A, 4 PIN |
| 文件頁數(shù)： | 6/15頁 |
| 文件大小： | 86K |
| 代理商： | BLW60C |
March 1993
6
Philips Semiconductors
Product specification
VHF power transistor
BLW60C
APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); T
h
= 25
°
C
Test circuit for 175 MHz
List of components:
f (MHz)
V
CC
(V)
12,5
13,5
P
L
(W)
45
45
P
S
(W)
<
14,2
G
p
(dB)
>
typ. 6,0
I
C
(A)
<
4,8
η
(%)
>
typ. 75
z
i
(
)
1,2
+
j1,4
Z
L
(
)
2,6
j1,2
175
175
5,0
75
C1 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C2 = C8 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
C3a = C3b = 47 pF ceramic capacitor (500 V)
C4 = 120 pF ceramic capacitor
C5 = 100 nF polyester capacitor
C6a = C6b = 8,2 pF ceramic capacitor (500 V)
C7 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
L1 = 1 turn Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2
×
5 mm
L2 = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2
×
5 mm
L3 = L8 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4 = L5 = strip (12 mm
×
6 mm); taps for C3a and C3b at 5 mm from transistor
L6 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 5,0 mm; length 6,0 mm; leads 2
×
5 mm
L7 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 4,5 mm; length 6,0 mm; leads 2
×
5 mm
L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
R1 = 10
(
±
10%) carbon resistor
R2 = 4,7
(
±
5%) carbon resistor
Component layout and printed-circuit board for 175 MHz test circuit: Fig.8.
Fig.7 Class-B test circuit at f = 175 MHz.
handbook, full pagewidth
MGP484
50
50
C2
L2
C3b
C1
C8
C6a
C7
C4
R2
C5
L4
L5
+
VCC
L7
L6
L8
L1
L3
C3a
T.U.T.
R1
C6b
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