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參數(shù)資料
| 型號(hào)： | BLW60C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-120A, 4 PIN |
| 文件頁數(shù)： | 3/15頁 |
| 文件大小： | 86K |
| 代理商： | BLW60C |
March 1993
3
Philips Semiconductors
Product specification
VHF power transistor
BLW60C
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
BE
= 0)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
Collector current (peak value); f
>
1 MHz
R.F. power dissipation (f
>
1 MHz); T
mb
= 25
°
C
Storage temperature
Operating junction temperature
V
CESM
V
CEO
V
EBO
I
C(AV)
I
CM
P
rf
T
stg
T
j
max.
max.
max.
max.
max.
max.
65 to
+
max.
36 V
16 V
4 V
9 A
22 A
100 W
150
°
C
200
°
C
Fig.2 D.C. SOAR.
handbook, halfpage
MGP479
2
10
1
1
10
10
2
VCE (V)
IC
(A)
Th = 70
°
C
Tmb = 25
°
C
Fig.3 R.F. power dissipation; V
CE
≤
16,5 V; f
>
MHz.
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
handbook, halfpage
0
100
50
0
100
MGP480
50
Th (
°
C)
Prf
(W)
ΙΙΙ
ΙΙ
Ι
derate by 0.52 W/K
0.38 W/K
THERMAL RESISTANCE
(dissipation = 40 W; T
mb
= 88
°
C, i.e. T
h
= 70
°
C)
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
R
th j-mb(dc)
R
th j-mb(rf)
R
th mb-h
=
=
=
2,8 K/W
2,05 K/W
0,45 K/W
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