參數(shù)資料
型號: BLW60C
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: VHF power transistor
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-120A, 4 PIN
文件頁數(shù): 11/15頁
文件大?。?/td> 86K
代理商: BLW60C
March 1993
11
Philips Semiconductors
Product specification
VHF power transistor
BLW60C
List of components:
TR1 = TR2 = BD137
C1 = 100 pF air dielectric trimmer (single insulated rotor type)
C2 = 27 pF ceramic capacitor
C3 = 180 pF ceramic capacitor
C4 = 100 pF air dielectric trimmer (single non-insulated rotor type)
C5 = C7 = 3,9 nF polyester capacitor
C6 = 2
×
270 pF polystyrene capacitors in parallel
C8 = C15 = C16 = 100 nF polyester capacitor
C9 = 2,2
μ
F moulded metallized polyester capacitor
C10 = 2
×
385 pF film dielectric trimmer
C11 = 68 pF ceramic capacitor
C12 = 2 x 82 pF ceramic capacitors in parallel
C13 = 47 pF ceramic capacitor
C14 = 385 pF film dielectric trimmer
L1 = 88 nH; 3 turns Cu wire (1,0 mm); int. dia. 9 mm; length 6,1 mm; leads 2
×
5 mm
L2 = L5 = Ferroxcube choke coil (cat. no. 4312 020 36640)
L3 = 68 nH; 3 turns enamelled Cu wire (1,6 mm); int. dia. 8 mm; length 8,3 mm; leads 2
×
5 mm
L4 = 96 nH; 3 turns enamelled Cu wire (1,6 mm); int. dia. 10 mm; length 7,6 mm; leads 2
×
5 mm
R1 = 27
(
±
5%) carbon resistor
R2 = 4,7
(
±
5%) carbon resistor
R3 = 1,5 k
(
±
5%) carbon resistor
R4 = 10
wirewound potentiometer (3 W)
R5 = 47
wirewound resistor (5,5 W)
R6 = 150
(
±
5%) carbon resistor
Measuring conditions for Figs
16
and
17
:
V
CC
= 12,5 V
f
1
= 28,000 MHz
f
2
= 28,001 MHz
T
h
= 25
°
C
R
th mb-h
0,45
°
K/W
I
C(ZS)
= 25 mA
typical values
Measuring conditions for Figs
18
and
19
:
V
CC
= 13,5 V
f
1
= 28,000 MHz
f
2
= 28,001 MHz
T
h
= 25
°
C
R
th mb-h
0,45
°
K/W
I
C(ZS)
= 25 mA
typical values
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