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參數(shù)資料
| 型號(hào)： | BLW29 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-120A, 4 PIN |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大?。?/td> | 69K |
| 代理商： | BLW29 |
August 1986
7
Philips Semiconductors
Product specification
VHF power transistor
BLW29
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.
Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.
handbook, full pagewidth
MGP420
72
150
C1
C2
L1
L3
L4
L5
L7
L6
C4
C5
R2
C6
C7
C3b
rivet
C3a
R1
L2
strip
+
VCC
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| BLW30 | VHF power transistor |
| BLW32 | UHF linear power transistor(UHF線性功率晶體管) |
| BLW33 | UHF Linear power transistor(UHF 線性功率晶體管) |
| BLW34 | UHF Linear power transistor(UHF 線性功率晶體管) |
| BLW50F | HF/VHF power transistor(HF/VHF功率 晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLW30 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:VHF power transistor |
| BLW31 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLW31_07 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLW32 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLW33 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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